Cerium-induced changes in the π-band of graphene

RSC Advances ◽  
2016 ◽  
Vol 6 (115) ◽  
pp. 114219-114223 ◽  
Author(s):  
Jingul Kim ◽  
Paengro Lee ◽  
Mintae Ryu ◽  
Heemin Park ◽  
Jinwook Chung
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Temperature Dependent ◽  
Layer Graphene ◽  
Structural And Electronic Properties ◽  
Induced Changes

By doping magnetic Ce atoms on a single layer graphene, we report a new and efficient means of modifying structural and electronic properties of graphene that opens a temperature-dependent band gap of size up to 0.5 eV.

scholarly journals Theoretical Prediction of the Structural and Electronic Properties of a Single Layer Graphene-like Two-dimensional Janus GaInSTe

2021 ◽  
Vol 37 (2) ◽  
Author(s):  
Nguyen Van Chuong ◽  
Nguyen Ngoc Hieu ◽  
Nguyen Van Hieu
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Electronic Properties ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Two Dimensional ◽  
Direct Band Gap ◽  
Structural And Electronic Properties ◽  
Direct Band ◽  
New Type

This paper constructs a new type of two-dimensional graphene-like Janus GaInSTe monolayer and systematically investigates its structural and electronic properties as well as the effect of external electric field using first-principles calculations. In the ground state, Janus GaInSTe monolayer is dynamically stable with no imaginary frequencies in its phonon spectrum and possesses a direct band gap semiconductor. The band gap of Janus GaInSTe monolayer can be tuned by applying an electric field, which leads the different transitions from semiconductor to metal, and from indirect to direct band gap. These findings show a great potential application of Janus GaInSTe material for designing next-generation devices.

scholarly journals Aryl Functionalization as a Route to Band Gap Engineering in Single Layer Graphene Devices

Nano Letters ◽  
2011 ◽  
Vol 11 (10) ◽  
pp. 4047-4051 ◽  
Author(s):  
Hang Zhang ◽  
Elena Bekyarova ◽  
Jhao-Wun Huang ◽  
Zeng Zhao ◽  
Wenzhong Bao ◽  
...  
Keyword(s):  
Band Gap ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Band Gap Engineering ◽  
Layer Graphene ◽  
Graphene Devices

Engineering of electronic properties of single layer graphene by swift heavy ion irradiation

2018 ◽  
Vol 123 (16) ◽  
pp. 161533 ◽  
Author(s):  
Sunil Kumar ◽  
Ashish Kumar ◽  
Ambuj Tripathi ◽  
Chetna Tyagi ◽  
D. K. Avasthi
Keyword(s):  
Electronic Properties ◽  
Ion Irradiation ◽  
Single Layer ◽  
Heavy Ion ◽  
Single Layer Graphene ◽  
Swift Heavy Ion Irradiation ◽  
Layer Graphene ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion

scholarly journals Tunable and sizable band gap of single-layer graphene sandwiched between hexagonal boron nitride

2012 ◽  
Vol 4 (2) ◽  
pp. e6-e6 ◽  
Author(s):  
Ruge Quhe ◽  
Jiaxin Zheng ◽  
Guangfu Luo ◽  
Qihang Liu ◽  
Rui Qin ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Band Gap ◽  
Hexagonal Boron Nitride ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene

Large and tunable thermoelectric effect in single layer graphene on bilayer graphene

2015 ◽  
Vol 29 (03) ◽  
pp. 1550003 ◽  
Author(s):  
Z. Z. Alisultanov
Keyword(s):  
Simple Model ◽  
Band Gap ◽  
Single Layer ◽  
Bilayer Graphene ◽  
Single Layer Graphene ◽  
Monolayer Graphene ◽  
Thermoelectric Effect ◽  
Layer Graphene ◽  
Trilayer Graphene

The conductivity and thermopower of a trilayer graphene based system have been studied within the framework of a simple model. It has been shown that kinks of the conductivity and peaks of the thermopower of the monolayer graphene formed on a tunable bilayer graphene appear near the edges of the band gap of the tunable bilayer graphene.

scholarly journals Semiconducting properties of perchlorate-doped graphene using an electrochemical method

RSC Advances ◽  
2017 ◽  
Vol 7 (27) ◽  
pp. 16823-16825 ◽  
Author(s):  
Chang-Soo Park ◽  
Dongil Chu ◽  
Yoon Shon ◽  
Eun Kyu Kim
Keyword(s):  
Band Gap ◽  
Electrochemical Method ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Semiconducting Properties ◽  
Gap Opening ◽  
Doped Graphene ◽  
P Type

We report a band gap opening and p-type doping for single layer graphene by an electrochemical method.

scholarly journals Investigation of electronic properties of chemical vapor deposition grown single layer graphene via doping of thin transparent conductive films

RSC Advances ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 3096-3103
Author(s):  
Anand Kumar Singh ◽  
Vivek Chaudhary ◽  
Arun Kumar Singh ◽  
S. R. P. Sinha
Keyword(s):  
Chemical Vapor Deposition ◽  
Charge Carrier ◽  
Electronic Properties ◽  
Vapor Deposition ◽  
Optoelectronic Devices ◽  
Single Layer ◽  
Chemical Vapor ◽  
Single Layer Graphene ◽  
Conductive Films ◽  
Layer Graphene

The tuning of charge carrier of graphene is a potential step for the realization of multifunctional use in current electronic/optoelectronic devices.

scholarly journals Erratum: Tunable and sizable band gap of single-layer graphene sandwiched between hexagonal boron nitride

2012 ◽  
Vol 4 (4) ◽  
pp. e16-e16 ◽  
Author(s):  
Ruge Quhe ◽  
Jiaxin Zheng ◽  
Guangfu Luo ◽  
Qihang Liu ◽  
Rui Qin ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Band Gap ◽  
Hexagonal Boron Nitride ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene
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