A facile and low-cost route to high-aspect-ratio microstructures on silicon via a judicious combination of flow-enabled self-assembly and metal-assisted chemical etching

A viable and low-cost strategy for fabricating high-aspect-ratio microstructures on silicon (Si) based on a judicious combination of flow-enabled self-assembly (FESA) and metal-assisted chemical etching (MaCE) is reported.

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Low Cost and High‐Aspect Ratio Micro/Nano Device Fabrication by Using Innovative Metal‐Assisted Chemical Etching Method

Advanced Engineering Materials ◽

10.1002/adem.201900490 ◽

2019 ◽

Vol 21 (8) ◽

pp. 1900490 ◽

Cited By ~ 6

Author(s):

Nguyen Van Toan ◽

Xiaoyue Wang ◽

Naoki Inomata ◽

Masaya Toda ◽

Ioana Voiculescu ◽

...

Keyword(s):

Aspect Ratio ◽

High Aspect Ratio ◽

Chemical Etching ◽

Low Cost ◽

Device Fabrication ◽

Etching Method ◽

Metal Assisted Chemical Etching

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Self-assembly nanostructured gold for high aspect ratio silicon microstructures by metal assisted chemical etching

RSC Advances ◽

10.1039/c5ra24947c ◽

2016 ◽

Vol 6 (19) ◽

pp. 16025-16029 ◽

Cited By ~ 23

Author(s):

L. Romano ◽

M. Kagias ◽

K. Jefimovs ◽

M. Stampanoni

Keyword(s):

Aspect Ratio ◽

High Aspect Ratio ◽

Self Assembly ◽

Chemical Etching ◽

Contrast Imaging ◽

Large Area ◽

Nanostructured Gold ◽

Metal Assisted Chemical Etching ◽

Silicon Microstructures ◽

Micro Patterns

Self-assembly Au nanostructures stabilize the catalyst during metal assisted chemical etching, improving the vertical profile of high aspect ratio Si dense micro-patterns on large area, such as diffraction gratings for X-ray phase contrast imaging.

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Passivation of high aspect ratio silicon nanowires by using catalytic chemical vapor deposition for radial heterojunction solar cell application

RSC Advances ◽

10.1039/c7ra08343b ◽

2017 ◽

Vol 7 (71) ◽

pp. 45101-45106 ◽

Cited By ~ 4

Author(s):

Gangqiang Dong ◽

Yurong Zhou ◽

Hailong Zhang ◽

Fengzhen Liu ◽

Guangyi Li ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Aspect Ratio ◽

Silicon Nanowires ◽

Vapor Deposition ◽

High Aspect Ratio ◽

Chemical Etching ◽

Chemical Vapor ◽

Solar Cell Application ◽

Catalytic Chemical Vapor Deposition ◽

Metal Assisted Chemical Etching

High aspect ratio silicon nanowires (SiNWs) prepared by metal-assisted chemical etching were passivated by using catalytic chemical vapor deposition (Cat-CVD).

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Wafer-Scale, Highly-Ordered Silicon Nanowires Produced by Step-and-Flash Imprint Lithography and Metal-Assisted Chemical Etching

MRS Proceedings ◽

10.1557/opl.2012.1663 ◽

2012 ◽

Vol 1512 ◽

Author(s):

Jian-Wei Ho ◽

Qixun Wee ◽

Jarrett Dumond ◽

Li Zhang ◽

Keyan Zang ◽

...

Keyword(s):

Aspect Ratio ◽

Cross Sections ◽

Silicon Nanowires ◽

High Aspect Ratio ◽

Chemical Etching ◽

Semiconductor Device ◽

Imprint Lithography ◽

Wafer Level ◽

Conventional Photolithography ◽

Metal Assisted Chemical Etching

ABSTRACTA combinatory approach of Step-and-Flash Imprint Lithography (SFIL) and Metal-Assisted Chemical Etching (MacEtch) was used to generate near perfectly-ordered, high aspect ratio silicon nanowires (SiNWs) on 4" silicon wafers. The ordering and shapes of SiNWs depends only on the SFIL nanoimprinting mould used, thereby enabling arbitary SiNW patterns not possible with nanosphere and interference lithography (IL) to be generated. Very densely packed SiNWs with periodicity finer than that permitted by conventional photolithography can be produced. The height of SiNWs is, in turn, controlled by the etching duration. However, it was found that very high aspect ratio SiNWs tend to be bent during processing. Hexagonal arrays of SiNW with circular and hexagonal cross-sections of dimensions 200nm and less were produced using pillar and pore patterned SFIL moulds. In summary, this approach allows highlyordered SiNWs to be fabricated on a wafer-level basis suitable for semiconductor device manufacturing.

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