A comparative study of graphene growth on SiC by hydrogen-CVD or Si sublimation through thermodynamic simulations

CrystEngComm ◽  
2018 ◽  
Vol 20 (26) ◽  
pp. 3702-3710
Author(s):  
Roy Dagher ◽  
Elisabeth Blanquet ◽  
Christian Chatillon ◽  
Timotée Journot ◽  
Marc Portail ◽  
...  

Thermodynamic simulations of SiC hydrogen annealing illustrating the impossibility of graphene formation due to the high pressure of C–H gases.

2019 ◽  
Vol 40 (7) ◽  
pp. 1092-1095 ◽  
Author(s):  
Seungyeol Oh ◽  
Jeonghwan Song ◽  
In Kyeong Yoo ◽  
Hyunsang Hwang

LWT ◽  
2020 ◽  
Vol 127 ◽  
pp. 109395
Author(s):  
Xu Wang ◽  
Xinyu Zhai ◽  
Haoran Zhang ◽  
Xiaoyu Zhang ◽  
Difeng Ren ◽  
...  

2010 ◽  
Vol 11 (1) ◽  
pp. 91-97 ◽  
Author(s):  
Shuang Niu ◽  
Zenghui Xu ◽  
Yudan Fang ◽  
Liyun Zhang ◽  
Yingjie Yang ◽  
...  

2010 ◽  
Vol 24 (24) ◽  
pp. 4851-4859
Author(s):  
KAIHUA HE ◽  
GUANG ZHENG ◽  
GANG CHEN ◽  
QILI CHEN ◽  
MIAO WAN ◽  
...  

The structural and electronic properties of BN(5, 5) and C(5, 5) nanotubes under pressure are studied by using first principles calculations. In our study range, BN(5, 5) undergoes obvious elliptical distortion, while for C(5, 5) the cross section first becomes an ellipse and then, under further pressure, is flattened. The band gap of BN(5, 5) decreases with increasing pressure, which is inverse to that of zinc blende BN, whereas for C(5, 5) the metallicity is always preserved under high pressure. The population of charge density indicates that intertube bonding is formed under pressure. We also find that BN(5, 5) may collapse, and a new polymer material based on C(5, 5) is formed by applying pressure.


2020 ◽  
Vol 837 ◽  
pp. 155505 ◽  
Author(s):  
D. Díaz-Anichtchenko ◽  
D. Santamaria-Perez ◽  
T. Marqueño ◽  
J. Pellicer-Porres ◽  
J. Ruiz-Fuertes ◽  
...  

Author(s):  
Kenji Oyamada ◽  
Naoki Miura

In Japan, a new standard of an assessment procedure for crack-like flaws in pressure equipment at elevated temperature is now under development in the High Pressure Institute of Japan (HPI). In this standard development, it is needed to adopt reference stress solutions for crack-like flaws in pressure equipment being subjected to membrane stress and/or bending stress. Such reference stress solutions have been proposed in various references such as ASME FFS-1/API579-1, BS7910, R5, FBR draft guideline, HPIS Z101-2, etc. A comparative study of those reference stress solutions was conducted in order to select appropriate one. As a result, reference stress solutions in HPIS Z101-2 were adopted. The sufficiency of adopted reference stress solutions was introduced in this paper. Also, the reference stress solutions for axially and circumferentially through-wall rectangular flawed cylinders, which were not provided in the HPIS Z101-2 standard but were utilized to derive those solutions adopted in the standard, were introduced in this paper. These solutions should be adopted in a new HPI standard for crack-like flaws in pressure equipment at elevated temperature.


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