Polarization-dependence of the Raman response of free-standing strained Ce0.8Gd0.2O2 membranes

2021 ◽  
Author(s):  
Alexander Konetschny ◽  
Marcel Weinhold ◽  
Christian Heiliger ◽  
Matthias Thomas Elm ◽  
Peter J. Klar
Keyword(s):  
Thin Films ◽  
Strain State ◽  
Polarization Dependence ◽  
Raman Mapping ◽  
Free Standing ◽  
Excitation Light ◽  
Oriented Polycrystalline ◽  
Raman Response

Square-shaped Ce0.8Gd0.2O2 (GDC) membranes are prepared by microstructuring techniques from (111)-oriented, polycrystalline GDC thin films. The strain state of the membranes is investigated by micro-Raman mapping using polarized excitation light....

Studies of the Coefficient of Thermal Expansion of Low-k ILD Materials by X-Ray Reflectivity

2006 ◽  
Vol 914 ◽  
Author(s):  
George Andrew Antonelli ◽  
Tran M. Phung ◽  
Clay D. Mortensen ◽  
David Johnson ◽  
Michael D. Goodner ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Free Standing ◽  
Dielectric Thin Films ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.

Entail the new path for permanent magnets: Free-standing Hf-Co thin films

2016 ◽  
Vol 681 ◽  
pp. 589-594 ◽  
Author(s):  
G. Durak Yüzüak ◽  
E. Yüzüak ◽  
Y. Elerman
Keyword(s):  
Thin Films ◽  
Permanent Magnets ◽  
Free Standing

The Elastic Moduli of Silver Thin Films Measured with a New Microtensile Tester

1991 ◽  
Vol 239 ◽  
Author(s):  
J. Ruud ◽  
D. Josell ◽  
A. L. Greer ◽  
F. Spaepen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Diffraction Grating ◽  
Strain Measurement ◽  
Elastic Moduli ◽  
Two Dimensional ◽  
Bulk Crystals ◽  
Free Standing ◽  
Tensile Direction ◽  
Silver Thin Films

ABSTRACTA new design for a thin film microtensile tester is presented. The strain is measured directly on the free-standing thin film from the displacement of laser spots diffracted from a thin grating applied to its surface by photolithography. The diffraction grating is two-dimensional, allowing strain measurement both along and transverse to the tensile direction. In principle, both Young's modulus and Poisson's ratio of a thin film can be determined. Ag thin films with strong <111> texture were tested. The measured Young moduli agreed with those measured on bulk crystals, but the measured Poisson ratios were low, most likely due to slight transverse folding of the film that developed during the test.

A tensile-testing technique for micrometer-sized free-standing thin films

2005 ◽  
Vol 484 (1-2) ◽  
pp. 426-432 ◽  
Author(s):  
Yi-Wen Cheng ◽  
David T. Read ◽  
J. David McColskey ◽  
Joyce E. Wright
Keyword(s):  
Thin Films ◽  
Tensile Testing ◽  
Free Standing ◽  
Testing Technique

scholarly journals Interfacial growth of free-standing PANI films: toward high-performance all-polymer supercapacitors

2021 ◽  
Author(s):  
Fuyao Zhong ◽  
Mingyu Ma ◽  
Zhuoran Zhong ◽  
Xinrong Lin ◽  
Mao Chen
Keyword(s):  
Thin Films ◽  
Energy Storage ◽  
High Performance ◽  
Free Standing ◽  
Binder Free ◽  
Interfacial Growth

A covalently cross-linked polyaniline network is synthesized via interfacial Buchwald-Hartwig polymerization/deprotection, enabling the generation of additive/binder-free and high-performance conducting thin-films for energy storage.

Mechanisms of Grain Growth in Free-Standing Nanograined Gold Thin Films

2005 ◽  
Vol 907 ◽  
Author(s):  
J. A. Gregg ◽  
K Hattar ◽  
C H Lei ◽  
I M Robertson
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Structural Changes ◽  
Dislocation Slip ◽  
Free Standing ◽  
Transmission Electron ◽  
Enhanced Properties ◽  
Gold Thin Films ◽  
Annealing Experiments

AbstractRetention of the enhanced properties reported for nanograined metallic systems requires that the nanostructure be insensitive to temperature and deformation. In situ transmission electron microscopy annealing experiments were employed to investigate the structural changes associated with the formation of micron-sized grains in nanograined evaporated gold thin films. This abnormal grain growth occurs randomly throughout the film. Twinning but not dislocation slip occurs in the growing grains until the grain size is in the hundreds of nanometer range. The twins appear to hinder growth and for grain growth to continue the twins must either be annihilated or be able to grow with the grain concurrently.

Highly conductive free-standing reduced graphene oxide thin films for fast photoelectric devices

Carbon ◽  
2017 ◽  
Vol 115 ◽  
pp. 561-570 ◽  
Author(s):  
Hua Yang ◽  
Yang Cao ◽  
Junhui He ◽  
Yue Zhang ◽  
Binbin Jin ◽  
...  
Keyword(s):  
Thin Films ◽  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Oxide Thin Films ◽  
Free Standing ◽  
Reduced Graphene ◽  
Photoelectric Devices

Anisotropic charge carrier transport in free-standing hexagonal boron nitride thin films

2016 ◽  
Vol 9 (6) ◽  
pp. 065801 ◽  
Author(s):  
Rajendra Dahal ◽  
Kawser Ahmed ◽  
Jia Woei Wu ◽  
Adam Weltz ◽  
James Jian-Qiang Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Charge Carrier ◽  
Carrier Transport ◽  
Hexagonal Boron Nitride ◽  
Charge Carrier Transport ◽  
Free Standing
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