Eliminating failure behavior by introducing CdS inter-layer in Cu2O-based memory cell

2018 ◽  
Vol 81 (2) ◽  
pp. 20101 ◽  
Author(s):  
Weijie Duan ◽  
Zhenxing Liu ◽  
Yang Zhang

Resistive switching random access memory (RRAM) has attracted great attention due to its outstanding performance for the next generation non-volatile memory. However, the unexpected failure behaviors seriously hinder the further studies and applications of this new memory device. In this work, the bipolar resistive switching characteristics in Pt/CdS/Cu2O/FTO cells are investigated. The CdS inter-layer is used to suppress the failure behavior in set process. Comparing to the Pt/Cu2O/FTO cell, the switching process in Pt/CdS/Cu2O/FTO cell is not affected even at a high set voltage and the failure behavior is eliminated effectively. Therefore, this work proposes a feasible approach to solve the failure problem in RRAM.

Vacuum ◽  
2019 ◽  
Vol 166 ◽  
pp. 226-230 ◽  
Author(s):  
Kai-Jhih Gan ◽  
Po-Tsun Liu ◽  
Sheng-Jie Lin ◽  
Dun-Bao Ruan ◽  
Ta-Chun Chien ◽  
...  

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