Pt/Ti/p‐In0.53Ga0.47As low‐resistance nonalloyed ohmic contact formed by rapid thermal processing

1989 ◽  
Vol 54 (23) ◽  
pp. 2306-2308 ◽  
Author(s):  
A. Katz ◽  
W. C. Dautremont‐Smith ◽  
S. N. G. Chu ◽  
P. M. Thomas ◽  
L. A. Koszi ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Low Resistance

scholarly journals Low Temperature Ni-Al Ohmic Contacts to p-Type 4H-SiC Using Semi-Salicide Processing

2018 ◽  
Vol 924 ◽  
pp. 389-392 ◽  
Author(s):  
Mattias Ekström ◽  
Shuoben Hou ◽  
Hossein Elahipanah ◽  
Arash Salemi ◽  
Mikael Östling ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ohmic Contact ◽  
Thermal Processing ◽  
Ohmic Contacts ◽  
Rapid Thermal Processing ◽  
Nickel Silicide ◽  
Second Step ◽  
Low Resistance ◽  
Annealing Step ◽  
P Type

Most semiconductor devices require low-resistance ohmic contact to p-type doped regions. In this work, we present a semi-salicide process that forms low-resistance contacts (~10-4 Ω cm2) to epitaxially grown p-type (>5×1018 cm-3) 4H-SiC at temperatures as low as 600 °C using rapid thermal processing (RTP). The first step is to self-align the nickel silicide (Ni2Si) at 600 °C. The second step is to deposit aluminium on top of the silicide, pattern it and then perform a second annealing step in the range 500 °C to 700 °C.

Pt/Ti/p‐InGaAsP nonalloyed ohmic contact formed by rapid thermal processing

1989 ◽  
Vol 65 (11) ◽  
pp. 4319-4323 ◽  
Author(s):  
A. Katz ◽  
W. C. Dautremont‐Smith ◽  
P. M. Thomas ◽  
L. A. Koszi ◽  
J. W. Lee ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Thermal Processing ◽  
Rapid Thermal Processing

Pt/Ti Ohmic contact top++‐InGaAsP (1.3 μm) formed by rapid thermal processing

1990 ◽  
Vol 67 (2) ◽  
pp. 884-889 ◽  
Author(s):  
A. Katz ◽  
P. M. Thomas ◽  
S. N. G. Chu ◽  
W. C. Dautremont‐Smith ◽  
R. G. Sobers ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Thermal Processing ◽  
Rapid Thermal Processing

Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient

2019 ◽  
Vol 8 (1) ◽  
pp. P35-P40 ◽  
Author(s):  
Haruo Sudo ◽  
Kozo Nakamura ◽  
Susumu Maeda ◽  
Hideyuki Okamura ◽  
Koji Izunome ◽  
...  
Keyword(s):  
Point Defect ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Defect Reaction

Modeling, Identification, and Control of Rapid Thermal Processing Systems

1994 ◽  
Vol 141 (11) ◽  
pp. 3200-3209 ◽  
Author(s):  
Charles D. Schaper ◽  
Mehrdad M. Moslehi ◽  
Krishna C. Saraswat ◽  
Thomas Kailath
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
And Control
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