Metal–oxide–semiconductor capacitance–voltage characteristics and band offsets for Si1−yCy/Si heterostructures

1998 ◽  
Vol 72 (18) ◽  
pp. 2286-2288 ◽  
Author(s):  
K. Rim ◽  
T. O. Mitchell ◽  
D. V. Singh ◽  
J. L. Hoyt ◽  
J. F. Gibbons ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Band Offsets ◽  
Capacitance Voltage

Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures

2007 ◽  
Vol 91 (13) ◽  
pp. 133510 ◽  
Author(s):  
Guy Brammertz ◽  
Koen Martens ◽  
Sonja Sioncke ◽  
Annelies Delabie ◽  
Matty Caymax ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Capacitance Voltage

Hole Trapping in the NBTI Characteristic of SiC MOSFETs

2018 ◽  
Vol 924 ◽  
pp. 667-670
Author(s):  
Yan Jing He ◽  
Hong Liang Lv ◽  
Xiao Yan Tang ◽  
Qing Wen Song ◽  
Yi Meng Zhang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Threshold Voltage Shift ◽  
Hole Trapping ◽  
Primary Mechanism ◽  
Capacitance Voltage ◽  
Cv Measurements ◽  
P Type

P-type implanted metal oxide semiconductor capacitors (MOSCAPs) and metal oxide semiconductor field effect transistors (MOSFETs) have been fabricated. The characteristics of hole trapping at the interface of SiO2/SiC are investigated through capacitance-voltage (CV) measurements with different starting voltages. The negative shift voltage ∆Vshift and the hysteresis voltages ∆VH which caused by the hole traps in the MOSCAPs and MOSFETs are extracted from CV results. The results show that the hole traps extracted from MOSCAPs are larger than the that extracted from the threshold voltage shift in the MOSFETs. It suggests holes trapping are the primary mechanism contributing to the NBTI, but not all the holes work. Part of the hole traps are compensation by sufficient electrons in the MOSFET structure.

Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited SixNy

2007 ◽  
Vol 556-557 ◽  
pp. 647-650 ◽  
Author(s):  
Jeong Hyun Moon ◽  
Dong Hwan Kim ◽  
Ho Keun Song ◽  
Jeong Hyuk Yim ◽  
Wook Bahng ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Current Density ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Field ◽  
Mos Capacitors ◽  
Dielectric Layers ◽  
Capacitance Voltage ◽  
Mos Structures

We have fabricated advanced metal-oxide-semiconductor (MOS) capacitors with ultra thin (5 nm) remote-PECVD SixNy dielectric layers and investigated electrical properties of nitrided SiO2/4H-SiC interface after oxidizing the SixNy in dry oxygen at 1150 °C for 30, 60, 90 min. Improvements of electrical properties have been revealed in capacitance-voltage (C-V) and current density-electrical field (J-E) measurements in comparison with dry oxide. The improvements of SiC MOS capacitors formed by oxidizing the pre-deposited SixNy have been explained in this paper.

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