Time-resolved photoluminescence studies of free and donor-bound exciton in GaN grown by hydride vapor phase epitaxy

1999 ◽  
Vol 75 (6) ◽  
pp. 838-840 ◽  
Author(s):  
G. E. Bunea ◽  
W. D. Herzog ◽  
M. S. Ünlü ◽  
B. B. Goldberg ◽  
R. J. Molnar
2013 ◽  
Vol 50 (42) ◽  
pp. 1-8 ◽  
Author(s):  
S. F. Chichibu ◽  
Y. Ishikawa ◽  
M. Tashiro ◽  
K. Hazu ◽  
K. Furusawa ◽  
...  

2000 ◽  
Vol 76 (22) ◽  
pp. 3224-3226 ◽  
Author(s):  
H. Y. Huang ◽  
C. K. Shu ◽  
W. C. Lin ◽  
C. H. Chuang ◽  
M. C. Lee ◽  
...  

Author(s):  
E.M. Goldys ◽  
M. Godlewski ◽  
T. Paskova ◽  
G. Pozina ◽  
B. Monemar

We report characterization of the red emission band in hydride vapor phase epitaxial GaN using cathodoluminescence spectroscopy and imaging and time-resolved photoluminescence. The observed properties of the emission are consistent with recombination of excitons bound at close donor-acceptor pairs. The time evolution of the emission signal during electron beam irradiation supports the association of the red emission with charged centres.


2002 ◽  
Vol 14 (13-14) ◽  
pp. 991-993 ◽  
Author(s):  
H.-M. Kim ◽  
D.S. Kim ◽  
Y.S. Park ◽  
D.Y. Kim ◽  
T.W. Kang ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document