High resolution transmission electron microscopy of elevated temperature Zn+ implanted and low-power pulsed laser annealed GaAs

2000 ◽  
Vol 88 (4) ◽  
pp. 1806-1810 ◽  
Author(s):  
G. Zollo ◽  
C. Pizzuto ◽  
G. Vitali ◽  
M. Kalitzova ◽  
D. Manno
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Elevated Temperature ◽  
High Resolution ◽  
Low Power ◽  
Pulsed Laser ◽  
Transmission Electron

Transmission Electron Microscopy and High-Resolution Transmission Electron Microscopy Study of Nanostructure and Metastable Phase Evolution in Pulsed-Laser-Ablation–Deposited Ti–Si Thin Film

2004 ◽  
Vol 19 (4) ◽  
pp. 1118-1125 ◽  
Author(s):  
S. Bysakh ◽  
K. Mitsuishi ◽  
M. Song ◽  
K. Furuya ◽  
K. Chattopadhyay
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Laser Ablation ◽  
High Resolution ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Phase Evolution ◽  
Nominal Composition ◽  
Ion Milling ◽  
Transmission Electron

Thin films with a nominal composition close to Ti62.5Si37.5 were deposited on NaCl substrate at room temperature by pulsed laser ablation to study the evolution of the intermetallic compound Ti5Si3 using a combination of high-resolution and in situ transmission electron microscopy. The as-deposited amorphous films contain Ti-rich clusters, which influence the phase evolution and the decomposition behavior of the amorphous film. These clusters influence the nucleation of a metastable fcc Ti solid solution (ao = 0.433 nm) with composition richer in Ti than Ti62.5Si37.5 as the first phase to crystallize at 773 K. The Ti5Si3 nanocrystals form later, and even at 1073 K they coexist with fine fcc Ti-rich nanocrystals. Subsequent Ar+ ion-milling of the crystallized film results in a loss of silicon. The composition change leads to the dissolution of the Ti5Si3 nanocrystals and evolution of a new metastable Ti-rich fcc phase (ao= 0.408 nm).

Atomic and Electronic Structures of Cu/Sapphire Interfaces by HRTEM and EELS Analyses

2005 ◽  
Vol 475-479 ◽  
pp. 3859-3862 ◽  
Author(s):  
Takeo Sasaki ◽  
Teruyasu Mizoguchi ◽  
Katsuyuki Matsunaga ◽  
Shingo Tanaka ◽  
Takahisa Yamamoto ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Energy Loss ◽  
Electronic Structures ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Transmission Electron ◽  
Electron Energy Loss

Interfacial atomic and electronic structures of Cu/Al2O3(0001) and Cu/Al2O3(11 ＿ ,20) prepared by a pulsed-laser deposition technique were characterized by high-resolution transmission electron microscopy (HRTEM) and electron energy-loss spectroscopy (EELS). It was found that both systems have O-terminated interfaces, irrespective of different substrate orientations. This indicates that Cu-O interactions across the interface play an important role for the Cu/Al2O3 systems.

High Voltage Transmission Electron Microscopy of Low Power Pulsed Laser Annealing of Zn+Implanted GaAs

1993 ◽  
Vol 32 (Part 1, No. 6A) ◽  
pp. 2597-2600 ◽  
Author(s):  
Nicolai Pashov ◽  
Maria Kalitzova ◽  
Gianfranco Vitali ◽  
Marco Rossi ◽  
Dieter Baither
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Power ◽  
High Voltage ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Transmission Electron ◽  
High Voltage Transmission

A Simple and Effective Route to Annihilate Defects in Nanocrystalline SnO2 Thin Films Prepared by Pulsed Laser Deposition

2007 ◽  
Vol 1026 ◽  
Author(s):  
Zhiwen Chen ◽  
C. M. L. Wu ◽  
C. H. Shek ◽  
J. K. L. Lai ◽  
Z. Jiao ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Pulsed Laser Deposition ◽  
Gas Sensors ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Transmission Electron ◽  
Sno2 Thin Films

AbstractThe microstructural defects of nanocrystalline SnO2 thin films prepared by pulsed laser deposition have been investigated using transmission electron microscopy, high-resolution transmission electron microscopy and Raman spectroscopy. Defects inside nanocrystalline SnO2 thin films could be significantly reduced by annealing the SnO2 thin films at 300 °C for 2 h. High-resolution transmission electron microscopy showed that stacking faults and twins were annihilated upon annealing. In particular, the edges of the SnO2 nanoparticles demonstrated perfect lattices free of defects after annealing. Raman spectra also confirmed that annealing the specimen was almost defect-free. By using thermal annealing, defect-free nanocrystalline SnO2 thin films can be prepared in a simple and practical way, which holds promise for applications as transparent electrodes and solid-state gas sensors.

Domain Structures of Epitaxial SrRuO3 Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
J. C. Jiang ◽  
X. Pan ◽  
C. L. Chen
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Structural Characteristics ◽  
Pulsed Laser ◽  
Cross Sectional ◽  
Domain Structures ◽  
Transmission Electron ◽  
High Resolution Tem

ABSTRACTThe structural characteristics of SrRuO3 thin films deposited on a (001) SrTiO3 substrate by pulsed laser were studied by transmission electron microscopy (TEM) and high-resolution TEM. TEM studies of cross-sectional specimens revealed the epitaxial growth of the films with the SrRuO3-(110) plane parallel to the SrTiO3-(001) plane. Two types of 90° rotational domain structures were observed in both cross-sectional and plan-viewing specimens. The in-plane orientations of these domains with respect to the substrate are either of SrRuO3-[110] // SrTiO3 - [100] and SrRuO3-[001] // SrTiO3-[010], or of SrRuO3-[110] // SrTiO3-[010] and SrRuO3-[001] // SrTiO3-[100].

A High Resolution Study of G.P. Zones in Aluminum - 4.2 at % Silver

1982 ◽  
Vol 40 ◽  
pp. 722-723 ◽  
Author(s):  
R. Gronsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Computer Simulations ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Resolution Study

The phenomenon of clustering in Al-Ag alloys has been extensively studied since the early work of Guinierl, wherein the pre-precipitation state was characterized as an assembly of spherical, ordered, silver-rich G.P. zones. Subsequent x-ray and TEM investigations yielded results in general agreement with this model. However, serious discrepancies were later revealed by the detailed x-ray diffraction - based computer simulations of Gragg and Cohen, i.e., the silver-rich clusters were instead octahedral in shape and fully disordered, atleast below 170°C. The object of the present investigation is to examine directly the structural characteristics of G.P. zones in Al-Ag by high resolution transmission electron microscopy.

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