Longitudinal optic phonon–plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates

Applied Physics Letters ◽

10.1063/1.1396818 ◽

2001 ◽

Vol 79 (9) ◽

pp. 1375-1377

Author(s):

C. P. Jiang ◽

Z. M. Huang ◽

Z. F. Li ◽

J. Yu ◽

S. L. Guo ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

Plasmon Coupling ◽

High Electron ◽

High Electron Mobility ◽

Gaas Substrates ◽

Optic Phonon ◽

Longitudinal Optic ◽

Longitudinal Optic Phonon

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Correlation between optical and electrical properties in In0.52Al0.48As∕InxGa1−xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates

Journal of Applied Physics ◽

10.1063/1.2222404 ◽

2006 ◽

Vol 100 (3) ◽

pp. 033705 ◽

Author(s):

L. J. Cui ◽

Y. P. Zeng ◽

B. Q. Wang ◽

Z. P. Zhu ◽

S. L. Guo ◽

...

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Optical And Electrical Properties ◽

High Electron Mobility ◽

Gaas Substrates

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Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590707 ◽

1999 ◽

Vol 17 (3) ◽

pp. 1131 ◽

Author(s):

W. E. Hoke ◽

P. J. Lemonias ◽

J. J. Mosca ◽

P. S. Lyman ◽

A. Torabi ◽

...

Keyword(s):

Epitaxial Growth ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

Device Performance ◽

High Electron ◽

High Electron Mobility ◽

Molecular Beam Epitaxial ◽

Gaas Substrates ◽

Molecular Beam Epitaxial Growth

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Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1376384 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1510 ◽

Author(s):

D. Lubyshev ◽

W. K. Liu ◽

T. R. Stewart ◽

A. B. Cornfeld ◽

X. M. Fang ◽

...

Keyword(s):

Electron Mobility ◽

Strain Relaxation ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Gaas Substrates

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Metamorphic InGaAs/InAlAs quantum well structures grown on GaAs substrates for high electron mobility transistor applications

Applied Physics Letters ◽

10.1063/1.122582 ◽

1998 ◽

Vol 73 (19) ◽

pp. 2760-2762 ◽

Author(s):

M. Behet ◽

K. van der Zanden ◽

G. Borghs ◽

A. Behres

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Quantum Well Structures ◽

Gaas Substrates

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Zero-field spin splitting in In0.52Al0.48As/InxGa1−xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov–de Haas measurements

Applied Physics Letters ◽

10.1063/1.1476055 ◽

2002 ◽

Vol 80 (17) ◽

pp. 3132-3134 ◽

Author(s):

L. J. Cui ◽

Y. P. Zeng ◽

B. Q. Wang ◽

Z. P. Zhu ◽

L. Y. Lin ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

Spin Splitting ◽

High Electron ◽

High Electron Mobility ◽

Gaas Substrates

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Rapid thermal annealing effects on step-graded InAlAs buffer layer and In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor structures on GaAs substrates

Journal of Applied Physics ◽

10.1063/1.1433174 ◽

2002 ◽

Vol 91 (4) ◽

pp. 2429-2432 ◽

Author(s):

L. J. Cui ◽

Y. P. Zeng ◽

B. Q. Wang ◽

J. Wu ◽

Z. P. Zhu ◽

...

Keyword(s):

Buffer Layer ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Gaas Substrates ◽

Annealing Effects

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Molecular beam epitaxial growth of metamorphic AlInSb/GaInSb high-electron-mobility-transistor structures on GaAs substrates for low power and high frequency applications

Journal of Applied Physics ◽

10.1063/1.3544041 ◽

2011 ◽

Vol 109 (3) ◽

pp. 033706 ◽

Author(s):

R. Loesch ◽

R. Aidam ◽

L. Kirste ◽

A. Leuther

Keyword(s):

Epitaxial Growth ◽

Electron Mobility ◽

High Frequency ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Molecular Beam Epitaxial ◽

Gaas Substrates ◽

Molecular Beam Epitaxial Growth

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High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design

Optical and Quantum Electronics ◽

10.1007/s11082-021-02786-2 ◽

2021 ◽

Vol 53 (3) ◽

Author(s):

Yi Huang ◽

Jinpeng Li ◽

Weizhong Chen ◽

Jin Wang ◽

Junjun Xue ◽

...

Keyword(s):

Barrier Layer ◽

Electron Mobility ◽

High Performance ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

physica status solidi (a) ◽

10.1002/pssa.201900694 ◽

2019 ◽

Vol 217 (7) ◽

pp. 1900694

Author(s):

Uiho Choi ◽

Donghyeop Jung ◽

Kyeongjae Lee ◽

Taemyung Kwak ◽

Taehoon Jang ◽

...

Keyword(s):

Buffer Layer ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Double Heterostructure ◽

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Nondestructive determination of sheet carrier density in pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures by room-temperature photoluminescence spectra

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/31/2/001 ◽

1998 ◽

Vol 31 (2) ◽

pp. 159-164 ◽

Author(s):

Wu Lu ◽

Jin-Hee Lee ◽

Krishnamachar Prasad ◽

Geok-Ing Ng ◽

Per Lindström

Keyword(s):

Electron Mobility ◽

Carrier Density ◽

Room Temperature ◽

High Electron Mobility Transistor ◽

High Electron ◽

Photoluminescence Spectra ◽

High Electron Mobility ◽

Room Temperature Photoluminescence ◽

Nondestructive Determination

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