Effect of Li substitution on dielectric and ferroelectric properties of ZnO thin films grown by pulsed-laser ablation

2006 ◽  
Vol 99 (3) ◽  
pp. 034105 ◽  
Author(s):  
Dhananjay ◽  
J. Nagaraju ◽  
S. B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Zno Thin Films ◽  
Li Substitution

Growth of ZnO thin films by ultraviolet pulsed-laser ablation: Study of plume dynamics

2005 ◽  
Vol 98 (12) ◽  
pp. 123301 ◽  
Author(s):  
A. Klini ◽  
A. Manousaki ◽  
D. Anglos ◽  
C. Fotakis
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Zno Thin Films ◽  
Plume Dynamics ◽  
Ablation Study

Pulsed laser ablation synthesis and ferroelectric properties of SrBi2Ta2O9 thin films

1998 ◽  
Vol 20 (1-4) ◽  
pp. 79-86 ◽  
Author(s):  
Pingxiong Yang ◽  
Lirong Zheng ◽  
Chenglu Lin ◽  
Wenbiao Wu ◽  
Masanori Okuyama
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation

Pulsed laser-ablation deposition of thin films of molybdenum silicide and its properties as a conducting barrier for ferroelectric random-access memory technology

1999 ◽  
Vol 14 (3) ◽  
pp. 940-947 ◽  
Author(s):  
Sucharita Madhukar ◽  
S. Aggarwal ◽  
A. M. Dhote ◽  
R. Ramesh ◽  
S. B. Samavedam ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Random Access ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Lead Zirconate ◽  
Capacitive Coupling ◽  
Molybdenum Silicide

We report on the feasibility of using molybdenum silicide as a conducting barrier for integration of ferroelectric lead zirconate titanate capacitors on Si. Thin films of MoSi2 were deposited by pulsed laser-ablation deposition (PLD). The silicide films showed a structural transition from amorphous to orthorhombic to tetragonal phase as the temperature of deposition was changed from room temperature to 900 °C. The four-probe resistivity and surface roughness of the films decreased with an increase in the deposition temperature and crystallinity of the phase. Ferroelectric (La, Sr)CoO3/Pb(Nb, Zr, Ti)O3/(La, Sr)CoO3 capacitors were grown on Si/poly Si/MoSi2, and Si/poly Si/MoSi2/Pt structures. Transmission electron microscopy (TEM) studies of the MoSi2/LSCO and MoSi2/Pt/LSCO heterostructures indicated the formation of a thin layer of SiO2. In the case of Pt/MoSi2, Pt reacts with the silicide and forms PtSi, consuming the entire platinum layer and, thus, makes it unsuitable as a composite barrier. Electrical testing of the LSCO/PNZT/LSCO capacitors through capacitive coupling showed desirable ferroelectric properties on these substrates.

Investigations of ZnO thin films deposited by a reactive pulsed laser ablation

2009 ◽  
Vol 52 (1) ◽  
pp. 99-103 ◽  
Author(s):  
J. B. Cui ◽  
Y. C. Soo ◽  
H. Kandel ◽  
M. A. Thomas ◽  
T. P. Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Zno Thin Films

scholarly journals Orientation dependent ferroelectric properties in samarium doped bismuth titanate thin films grown by the pulsed-laser-ablation method

2006 ◽  
Vol 89 (3) ◽  
pp. 032901 ◽  
Author(s):  
Zhenxiang Cheng ◽  
Chinna Venkatasamy Kannan ◽  
Kiyoshi Ozawa ◽  
Hideo Kimura ◽  
Xiaolin Wang
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Laser Ablation Method

Synthesis and properties of p-type nitrogen-doped ZnO thin films by pulsed laser ablation of a Zn-rich Zn3N2 target

2007 ◽  
Vol 22 (8) ◽  
pp. 2339-2344 ◽  
Author(s):  
A. Allenic ◽  
W. Guo ◽  
Y.B. Chen ◽  
G.Y. Zhao ◽  
X.Q. Pan ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Zno Thin Films ◽  
Zno Films ◽  
Transmission Electron ◽  
Columnar Grains ◽  
P Type ◽  
20 Nm

Epitaxial ZnO thin films doped uniformly with nitrogen at 1020 atoms/cm3 were fabricated by pulsed laser ablation of a Zn-rich Zn3N2 target. The films grown at 300 °C and annealed at 600 °C in O2 showed p-type conductivity. Two acceptor levels at 105 and 224 meV were determined by temperature-dependent Hall and photoluminescence measurements of the p-type samples. Transmission electron microscopy studies revealed that the p-type ZnO films consist of 10–20 nm columnar grains with a high density of defects and grain boundaries that may facilitate the annihilation of native donors and the activation of acceptors during postdeposition annealing.

C-Axis Oriented Ferroelectric thin Films of PbtiO3 on Silicon Substrate by Pulsed Laser Ablation

1995 ◽  
Vol 397 ◽  
Author(s):  
V. R. Palkar ◽  
S. C. Purandare ◽  
S. P. Pai ◽  
S. Chattopadhyay ◽  
P. R. Apte ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Film Deposition ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Deposition Conditions

ABSTRACTWe are reporting the successful deposition of single phase c-axis oriented ferroelectric thin films of PbTiO3 on Si (100) by pulsed laser deposition. It is shown that the formation of non ferroelectric Pb2Ti2O6 phase at the interface could be avoided by raising the substrate temperature sufficiently high. The film deposition conditions are optimized so as to achieve better ferroelectric properties.

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