Off-centered polarization and ferroelectric phase transition in Li-doped ZnO thin films grown by pulsed-laser ablation

2007 ◽  
Vol 101 (10) ◽  
pp. 104104 ◽  
Author(s):  
Dhananjay ◽  
J. Nagaraju ◽  
S. B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Laser Ablation ◽  
Ferroelectric Phase Transition ◽  
Ferroelectric Phase ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Zno Thin Films ◽  
Doped Zno

Growth of ZnO thin films by ultraviolet pulsed-laser ablation: Study of plume dynamics

2005 ◽  
Vol 98 (12) ◽  
pp. 123301 ◽  
Author(s):  
A. Klini ◽  
A. Manousaki ◽  
D. Anglos ◽  
C. Fotakis
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Zno Thin Films ◽  
Plume Dynamics ◽  
Ablation Study

Investigations of ZnO thin films deposited by a reactive pulsed laser ablation

2009 ◽  
Vol 52 (1) ◽  
pp. 99-103 ◽  
Author(s):  
J. B. Cui ◽  
Y. C. Soo ◽  
H. Kandel ◽  
M. A. Thomas ◽  
T. P. Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Zno Thin Films

Synthesis and properties of p-type nitrogen-doped ZnO thin films by pulsed laser ablation of a Zn-rich Zn3N2 target

2007 ◽  
Vol 22 (8) ◽  
pp. 2339-2344 ◽  
Author(s):  
A. Allenic ◽  
W. Guo ◽  
Y.B. Chen ◽  
G.Y. Zhao ◽  
X.Q. Pan ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Zno Thin Films ◽  
Zno Films ◽  
Transmission Electron ◽  
Columnar Grains ◽  
P Type ◽  
20 Nm

Epitaxial ZnO thin films doped uniformly with nitrogen at 1020 atoms/cm3 were fabricated by pulsed laser ablation of a Zn-rich Zn3N2 target. The films grown at 300 °C and annealed at 600 °C in O2 showed p-type conductivity. Two acceptor levels at 105 and 224 meV were determined by temperature-dependent Hall and photoluminescence measurements of the p-type samples. Transmission electron microscopy studies revealed that the p-type ZnO films consist of 10–20 nm columnar grains with a high density of defects and grain boundaries that may facilitate the annihilation of native donors and the activation of acceptors during postdeposition annealing.

Study on pulsed laser ablation and deposition of ZnO thin films by L-MBE

2007 ◽  
Vol 50 (3) ◽  
pp. 290-301 ◽  
Author(s):  
YongNing He ◽  
JingWen Zhang ◽  
XiaoDong Yang ◽  
QingAn Xu ◽  
ChangChun Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Zno Thin Films

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

ZnS thin films grown on Si(100) by XeCl pulsed laser ablation

2001 ◽  
Vol 177 (1-2) ◽  
pp. 73-77 ◽  
Author(s):  
K.T Hillie ◽  
C Curren ◽  
H.C Swart
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation

Electroreflectance study of antimony doped ZnO thin films grown by pulsed laser deposition

2021 ◽  
Vol 120 ◽  
pp. 111461
Author(s):  
Sukittaya Jessadaluk ◽  
Narathon Khemasiri ◽  
Prapakorn Rattanawarinchai ◽  
Navaphun Kayunkid ◽  
Sakon Rahong ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Doped Zno
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