scholarly journals High temperature ferromagnetism in Ni-doped In2O3 and indium-tin oxide

2006 ◽  
Vol 89 (2) ◽  
pp. 022501 ◽  
Author(s):  
Germanas Peleckis ◽  
Xiaolin Wang ◽  
Shi Xue Dou
Keyword(s):  
High Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide

High temperature, transparent, superhydrophobic Teflon AF-2400/Indium tin oxide nanocomposite thin films

2019 ◽  
Vol 30 (17) ◽  
pp. 175702 ◽  
Author(s):  
Raad A Alawajji ◽  
Ganesh K Kannarpady ◽  
Zeid A Nima ◽  
Nigel Kelly ◽  
Fumiya Watanabe ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Teflon Af ◽  
Nanocomposite Thin Films

An apparent n to p transition in reactively sputtered indium–tin–oxide high temperature strain gages

2002 ◽  
Vol 405 (1-2) ◽  
pp. 263-269 ◽  
Author(s):  
Otto J Gregory ◽  
Qing Luo ◽  
Joseph M Bienkiewicz ◽  
Brian M Erwin ◽  
Everett E Crisman
Keyword(s):  
High Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Strain Gages ◽  
Temperature Strain

scholarly journals High Temperature Conductive Stability of Indium Tin Oxide Films

2020 ◽  
Vol 7 ◽  
Author(s):  
Haiou Li ◽  
Lei Guo ◽  
Xingpeng Liu ◽  
Tangyou Sun ◽  
Qi Li ◽  
...  
Keyword(s):  
High Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Films ◽  
Tin Oxide Films

Indium Tin Oxide Film Characteristics after Chemical Mechanical Polishing Process with Control of Pad Conditioning Temperature

2007 ◽  
Vol 124-126 ◽  
pp. 263-266
Author(s):  
Nam Hoon Kim ◽  
Gwon Woo Choi ◽  
Yong Jin Seo ◽  
Woo Sun Lee
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Removal Rate ◽  
Optical Transmittance ◽  
Conditioning Process ◽  
Conditioning Temperature ◽  
Chemical Mechanical Polishing Process ◽  
Pad Conditioning

Indium tin oxide (ITO) CMP was performed by change of de-ionized water (DIW) temperature in pad conditioning process. DIW with high temperature was employed in pad conditioning immediately before ITO-CMP. The removal rate of ITO thin film polished by silica slurry immediately after pad conditioning process with the different DIW temperatures dramatically increased to 93.0 nm/min after pad conditioning at DIW of 75 oC, while that after the general conditioning process at 30 oC was about 66.1 nm/min. The grains of ITO thin film became indistinguishable by CMP after pad conditioning with the high-temperature DIW. The carrier density decreased with the increase of conditioning temperature. The hall mobility rapidly increased regardless of conditioning temperature. The uniformity of optical transmittance also improved.

High temperature stability of indium tin oxide thin films

2002 ◽  
Vol 406 (1-2) ◽  
pp. 286-293 ◽  
Author(s):  
Otto J. Gregory ◽  
Qing Luo ◽  
Everett E. Crisman
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Temperature Stability ◽  
High Temperature Stability ◽  
Oxide Thin Films
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