Threshold voltage instability of p-channel metal-oxide-semiconductor field effect transistors with hafnium based dielectrics

Applied Physics Letters ◽

10.1063/1.2719022 ◽

2007 ◽

Vol 90 (14) ◽

pp. 143502 ◽

Author(s):

C. Z. Zhao ◽

M. B. Zahid ◽

J. F. Zhang ◽

G. Groeseneken ◽

R. Degraeve ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Voltage Instability

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Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC($000\bar{1}$) Metal–Oxide–Semiconductor Field-Effect Transistors

Applied Physics Express ◽

10.1143/apex.5.041302 ◽

2012 ◽

Vol 5 (4) ◽

pp. 041302 ◽

Author(s):

Mitsuo Okamoto ◽

Youichi Makifuchi ◽

Miwako Iijima ◽

Yoshiyuki Sakai ◽

Noriyuki Iwamuro ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Mobility ◽

Voltage Instability

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Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.08jc02 ◽

2010 ◽

Vol 49 (8) ◽

pp. 08JC02 ◽

Author(s):

Koji Eriguchi ◽

Yoshinori Nakakubo ◽

Asahiko Matsuda ◽

Masayuki Kamei ◽

Yoshinori Takao ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Plasma Process ◽

Voltage Instability ◽

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Threshold voltage instability characteristics under positive dynamic stress in ultrathin HfO2 metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1805196 ◽

2004 ◽

Vol 85 (15) ◽

pp. 3184-3186 ◽

Author(s):

Se Jong Rhee ◽

Chang Yong Kang ◽

Chang Seok Kang ◽

Chang Hwan Choi ◽

Rino Choi ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Dynamic Stress ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Voltage Instability

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Threshold Voltage Instability Due to Oxygen Thermal Donor Impurities in Metal Oxide Semiconductor Field Effect Transistors

Journal of The Electrochemical Society ◽

10.1149/1.1392630 ◽

1999 ◽

Vol 146 (11) ◽

pp. 4298-4302 ◽

Author(s):

M. Murata ◽

R. Nayve ◽

T. Mihara ◽

Y. Kondoh ◽

T. Iwamori

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Voltage Instability ◽

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Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors Based on 2D Hole Gas

physica status solidi (a) ◽

10.1002/pssa.201900538 ◽

2019 ◽

Vol 216 (24) ◽

pp. 1900538 ◽

Author(s):

Mingchao Yang ◽

Liwen Sang ◽

Meiyong Liao ◽

Masataka Imura ◽

Hongdong Li ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Voltage Instability

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Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3560463 ◽

2011 ◽

Vol 98 (9) ◽

pp. 092112 ◽

Author(s):

Chih-Hao Dai ◽

Ting-Chang Chang ◽

Ann-Kuo Chu ◽

Yuan-Jui Kuo ◽

Wen-Hung Lo ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Dynamic Stress ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Voltage Instability ◽

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Functional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation

Applied Physics Letters ◽

10.1063/1.3549178 ◽

2011 ◽

Vol 98 (5) ◽

pp. 053501 ◽

Author(s):

Anri Nakajima ◽

Takashi Kudo ◽

Takashi Ito

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Power Operation ◽

Ultralow Power ◽

Tunnel Injection ◽

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Effects of random number and location of the nanosized metal grains on the threshold voltage variability of silicon gate-all-around nanowire n-type metal-oxide-semiconductor field-effect transistors

Journal of Computational Electronics ◽

10.1007/s10825-020-01572-9 ◽

2020 ◽

Vol 19 (4) ◽

pp. 1478-1484

Author(s):

Wen-Li Sung ◽

Yiming Li

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Random Number ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Abnormal threshold voltage shift under hot carrier stress in Ti1−xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4822158 ◽

2013 ◽

Vol 114 (12) ◽

pp. 124505 ◽

Author(s):

Jyun-Yu Tsai ◽

Ting-Chang Chang ◽

Wen-Hung Lo ◽

Szu-Han Ho ◽

Ching-En Chen ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Hot Carrier ◽

Hot Carrier Stress

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Effects of Si/Ni Composition Ratio of NixSiyGate Electrode and Hf/Si Composition Ratio of Hf-Based High-kInsulator on Threshold Voltage Controllability and Mobility of Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.036504 ◽

2010 ◽

Vol 49 (3) ◽

pp. 036504

Author(s):

Masayuki Terai ◽

Takashi Hase ◽

Kentaro Shibahara ◽

Hirohito Watanabe

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Composition Ratio

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