Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3560463 ◽

2011 ◽

Vol 98 (9) ◽

pp. 092112 ◽

Author(s):

Chih-Hao Dai ◽

Ting-Chang Chang ◽

Ann-Kuo Chu ◽

Yuan-Jui Kuo ◽

Wen-Hung Lo ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Dynamic Stress ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Voltage Instability ◽

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Threshold voltage instability characteristics under positive dynamic stress in ultrathin HfO2 metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1805196 ◽

2004 ◽

Vol 85 (15) ◽

pp. 3184-3186 ◽

Author(s):

Se Jong Rhee ◽

Chang Yong Kang ◽

Chang Seok Kang ◽

Chang Hwan Choi ◽

Rino Choi ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Dynamic Stress ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Voltage Instability

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Hot Carrier ◽

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Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

Applied Physics Letters ◽

10.1063/1.2189456 ◽

2006 ◽

Vol 88 (13) ◽

pp. 132107 ◽

Author(s):

A. Ritenour ◽

A. Khakifirooz ◽

D. A. Antoniadis ◽

R. Z. Lei ◽

W. Tsai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

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Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC($000\bar{1}$) Metal–Oxide–Semiconductor Field-Effect Transistors

Applied Physics Express ◽

10.1143/apex.5.041302 ◽

2012 ◽

Vol 5 (4) ◽

pp. 041302 ◽

Author(s):

Mitsuo Okamoto ◽

Youichi Makifuchi ◽

Miwako Iijima ◽

Yoshiyuki Sakai ◽

Noriyuki Iwamuro ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Mobility ◽

Voltage Instability

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Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.08jc02 ◽

2010 ◽

Vol 49 (8) ◽

pp. 08JC02 ◽

Author(s):

Koji Eriguchi ◽

Yoshinori Nakakubo ◽

Asahiko Matsuda ◽

Masayuki Kamei ◽

Yoshinori Takao ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Plasma Process ◽

Voltage Instability ◽

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Inversion-type surface channel In0.53]Ga{in0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts

2009 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2009.5159330 ◽

2009 ◽

Author(s):

Hock-Chun Chin ◽

Xinke Liu ◽

Leng-Seow Tan ◽

Yee-Chia Yeo

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Cmos Compatible ◽

High K Dielectric

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Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-k/Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.061503 ◽

2011 ◽

Vol 50 (6R) ◽

pp. 061503 ◽

Author(s):

Ryosuke Iijima ◽

Lisa F. Edge ◽

John Bruley ◽

Vamsi Paruchuri ◽

Mariko Takayanagi

Keyword(s):

Metal Oxide ◽

Crystal Orientation ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Substrates ◽

High K ◽

Orientation Difference

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Threshold voltage instability of p-channel metal-oxide-semiconductor field effect transistors with hafnium based dielectrics

Applied Physics Letters ◽

10.1063/1.2719022 ◽

2007 ◽

Vol 90 (14) ◽

pp. 143502 ◽

Author(s):

C. Z. Zhao ◽

M. B. Zahid ◽

J. F. Zhang ◽

G. Groeseneken ◽

R. Degraeve ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Voltage Instability

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Effect of La2O3Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-k/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BC10 ◽

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Hot Carrier ◽

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Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-k/Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.061503 ◽

2011 ◽

Vol 50 (6) ◽

pp. 061503 ◽

Author(s):

Ryosuke Iijima ◽

Lisa F. Edge ◽

John Bruley ◽

Vamsi Paruchuri ◽

Mariko Takayanagi

Keyword(s):

Metal Oxide ◽

Crystal Orientation ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Substrates ◽

High K ◽

Orientation Difference

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