Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics
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2010 ◽
Vol 31
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pp. 231-233
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2016 ◽
Vol 12
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pp. 888-891
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2012 ◽
Vol 33
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pp. 1015-1017
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2008 ◽
Vol 29
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pp. 1292-1295
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2012 ◽
Vol 59
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pp. 2689-2698
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2011 ◽
Vol 32
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pp. 336-338
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2010 ◽
Vol 157
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pp. H272
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2017 ◽
Vol 80
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pp. 10103
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2014 ◽
Vol 14
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pp. 1713-1717
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