Electric field dependence of trap-assisted-tunneling current in strained SiGe source/drain junctions

2009 ◽  
Vol 94 (23) ◽  
pp. 233507 ◽  
Author(s):  
M. Bargallo Gonzalez ◽  
E. Simoen ◽  
B. Vissouvanadin ◽  
G. Eneman ◽  
P. Verheyen ◽  
...  
2009 ◽  
Vol 30 (5) ◽  
pp. 562-564 ◽  
Author(s):  
E. Simoen ◽  
F. De Stefano ◽  
G. Eneman ◽  
B. De Jaeger ◽  
C. Claeys ◽  
...  

1999 ◽  
Vol 560 ◽  
Author(s):  
S. D. Ganichev ◽  
E. Ziemann ◽  
W. Prettl ◽  
A. A. Istratov ◽  
E. R. Weber

ABSTRACTThe electric field dependence of emission of carriers from deep impurities in semiconductors has been investigated applying static and terahertz electric fields. It is shown that at high electric field strengths carrier emission is dominated by phonon assisted tunneling which may easily be recognized by plotting the emission rate as a function of the square of the electric field strength in a log-lin plot giving a straight line. For charged impurities the transition from phonon assisted tunneling to Poole-Frenkel effect at low fields can be traced back.


2015 ◽  
Vol 135 (12) ◽  
pp. 731-736
Author(s):  
Takuma Terakura ◽  
Kei Takano ◽  
Takanori Yasuoka ◽  
Shigekazu Mori ◽  
Osamu Hosokawa ◽  
...  

1985 ◽  
Vol 40 (9) ◽  
pp. 874-876
Author(s):  
Hilmar Bischof ◽  
Wolfram Baumann

Abstract The effect of an external electric field on the total fluorescence of solute molecules is studied up to fourth order theoretically, and is checked experimentally with 4´-N,N-dimethylamino- 4-nitrostilbene in dioxane at room temperature.


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