High Field Limitation of Poole-Frenkel Emission Caused by Tunneling

1999 ◽  
Vol 560 ◽  
Author(s):  
S. D. Ganichev ◽  
E. Ziemann ◽  
W. Prettl ◽  
A. A. Istratov ◽  
E. R. Weber
Keyword(s):  
Field Strength ◽  
Electric Field ◽  
Field Dependence ◽  
Electric Fields ◽  
High Field ◽  
Emission Rate ◽  
Electric Field Dependence ◽  
Straight Line ◽  
Frenkel Emission ◽  
Assisted Tunneling

ABSTRACTThe electric field dependence of emission of carriers from deep impurities in semiconductors has been investigated applying static and terahertz electric fields. It is shown that at high electric field strengths carrier emission is dominated by phonon assisted tunneling which may easily be recognized by plotting the emission rate as a function of the square of the electric field strength in a log-lin plot giving a straight line. For charged impurities the transition from phonon assisted tunneling to Poole-Frenkel effect at low fields can be traced back.

Electric field dependence of trap-assisted-tunneling current in strained SiGe source/drain junctions

2009 ◽  
Vol 94 (23) ◽  
pp. 233507 ◽  
Author(s):  
M. Bargallo Gonzalez ◽  
E. Simoen ◽  
B. Vissouvanadin ◽  
G. Eneman ◽  
P. Verheyen ◽  
...  
Keyword(s):  
Electric Field ◽  
Field Dependence ◽  
Tunneling Current ◽  
Electric Field Dependence ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling ◽  
Strained Sige

Notizen: Electric Field Dependence of the Ionization Threshold of Benzene and the Benzene-Argon Complex

1981 ◽  
Vol 36 (11) ◽  
pp. 1257-1258 ◽  
Author(s):  
K. H. Fung ◽  
H. L. Selzle ◽  
E. W. Schlag
Keyword(s):  
Electric Field ◽  
Ionization Potential ◽  
Field Dependence ◽  
Electric Fields ◽  
Applied Electric Field ◽  
Ionization Threshold ◽  
Square Root ◽  
Strong Function ◽  
Large Molecules ◽  
Electric Field Dependence

The ionization potential measured as a threshold to photoionization for benzene and the benzene-argon com­plex is shown to be a strong function of the applied electric field required to detect the ionization event. The ionization potential is lowered by moderate electric fields and the field dependence is found to be the same for the bare molecule and its Van der Waals complex. The data can be fitted with a square root dependence on the electric field and this shows that large molecules behave like atoms at the ionization threshold.

Transient Electric Field Analysis in Consideration of the Electric Field Dependence of Resistivity in the Converter Transformer

2015 ◽  
Vol 135 (12) ◽  
pp. 731-736
Author(s):  
Takuma Terakura ◽  
Kei Takano ◽  
Takanori Yasuoka ◽  
Shigekazu Mori ◽  
Osamu Hosokawa ◽  
...  
Keyword(s):  
Electric Field ◽  
Field Dependence ◽  
Field Analysis ◽  
Electric Field Dependence ◽  
Electric Field Analysis ◽  
Transient Electric Field

scholarly journals Electric Field Dependence of the Fluorescence Intensity of Solute Molecules and Fourth Order Effects

1985 ◽  
Vol 40 (9) ◽  
pp. 874-876
Author(s):  
Hilmar Bischof ◽  
Wolfram Baumann
Keyword(s):  
Electric Field ◽  
External Electric Field ◽  
Field Dependence ◽  
Fourth Order ◽  
Fluorescence Intensity ◽  
Room Temperature ◽  
Order Effects ◽  
Electric Field Dependence ◽  
Total Fluorescence

Abstract The effect of an external electric field on the total fluorescence of solute molecules is studied up to fourth order theoretically, and is checked experimentally with 4´-N,N-dimethylamino- 4-nitrostilbene in dioxane at room temperature.

scholarly journals Photoluminescence of CdSe/ZnS quantum dots in nematic liquid crystals in electric fields

2018 ◽  
Vol 9 ◽  
pp. 1544-1549 ◽  
Author(s):  
Margarita A Kurochkina ◽  
Elena A Konshina ◽  
Daria Khmelevskaia
Keyword(s):  
Quantum Dots ◽  
Liquid Crystals ◽  
Field Strength ◽  
Electric Field ◽  
Electric Field Strength ◽  
Electric Fields ◽  
Dielectric Anisotropy ◽  
Vertical Position ◽  
Decay Times ◽  
Pl Intensity

We have experimentally investigated the effect of the reorientation of a nematic liquid crystal (LC) in an electric field on the photoluminescence (PL) of CdSe/ZnS semiconductor quantum dots (QDs). To the LC with positive dielectric anisotropy, 1 wt % QDs with a core diameter of 5 nm was added. We compared the change of PL intensity and decay times of QDs in LC cells with initially planar or vertically orientated molecules, i.e., in active or passive LC matrices. The PL intensity of the QDs increases four-fold in the active LC matrix and only 1.6-fold in the passive LC matrix without reorientation of the LC molecules. With increasing electric field strength, the quenching of QDs luminescence occurred in the active LC matrix, while the PL intensity did not change in the passive LC matrix. The change in the decay time with increasing electric field strength was similar to the behavior of the PL intensity. The observed buildup in the QDs luminescence can be associated with the transfer of energy from LC molecules to QDs. In a confocal microscope, we observed the increase of particle size and the redistribution of particles in the active LC matrix with the change of the electric field strength. At the same time, no significant changes occurred in the passive LC matrix. With the reorientation of LC molecules from the planar in vertical position in the LC active matrix, quenching of QD luminescence and an increase of the ion current took place simultaneously. The obtained results are interesting for controlling the PL intensity of semiconductor QDs in liquid crystals by the application of electric fields.

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