scholarly journals Effects of electron-irradiation on electrical properties of AlGaN/GaN Schottky barrier diodes

2009 ◽  
Vol 105 (12) ◽  
pp. 123704 ◽  
Author(s):  
Z.-Q. Fang ◽  
G. C. Farlow ◽  
B. Claflin ◽  
D. C. Look ◽  
D. S. Green
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Electron Irradiation ◽  
Schottky Barrier Diodes

Electrical Properties of Sc Schottky Barrier Diodes Fabricated on Argon-Ion Sputtered p-GaAs

1998 ◽  
Vol 37 (Part 2, No. 1A/B) ◽  
pp. L10-L12 ◽  
Author(s):  
Stewart A. Goodman ◽  
F. Danie Auret ◽  
Prakash N. K. Deenapanray ◽  
Gerrit Myburg
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Argon Ion

Investigation of photo-induced effect on electrical properties of Au/PPy/n-Si (MPS) type schottky barrier diodes

2017 ◽  
Vol 28 (9) ◽  
pp. 6413-6420 ◽  
Author(s):  
Gülçin Ersöz ◽  
İbrahim Yücedağ ◽  
Sümeyye Bayrakdar ◽  
Şemsettin Altındal ◽  
Ahmet Gümüş
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes

scholarly journals Electrical Properties of Diamond Platinum Vertical Schottky Barrier Diodes

2016 ◽  
Vol 3 ◽  
pp. S159-S164 ◽  
Author(s):  
Alexander Polyakov ◽  
Nikolay Smirnov ◽  
Sergey Tarelkin ◽  
Anatoliy Govorkov ◽  
Vitaly Bormashov ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes

Investigation of temperature dependent electrical properties of Ni/Al0.26Ga0.74N Schottky barrier diodes

2014 ◽  
Vol 564 ◽  
pp. 367-374 ◽  
Author(s):  
A. Akkaya ◽  
T. Karaaslan ◽  
M. Dede ◽  
H. Çetin ◽  
E. Ayyıldız
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Temperature Dependent

scholarly journals High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes

Nanomaterials ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 194 ◽  
Author(s):  
Guixia Yang ◽  
Yuanlong Pang ◽  
Yuqing Yang ◽  
Jianyong Liu ◽  
Shuming Peng ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Room Temperature ◽  
Radiation Detectors ◽  
High Dose ◽  
Irradiation Effect ◽  
Self Healing ◽  
Schottky Barrier Diodes ◽  
Induced Current ◽  
On Line

Silicon carbide (SiC) has been widely used for electronic radiation detectors and atomic battery sensors. However, the physical properties of SiC exposure to high-dose irradiation as well as its related electrical responses are not yet well understood. Meanwhile, the current research in this field are generally focused on electrical properties and defects formation, which are not suitable to explain the intrinsic response of irradiation effect since defect itself is not easy to characterize, and it is complex to determine whether it comes from the raw material or exists only upon irradiation. Therefore, a more straightforward quantification of irradiation effect is needed to establish the direct correlation between irradiation-induced current and the radiation fluence. This work reports the on-line electrical properties of 4H-SiC Schottky barrier diodes (SBDs) under high-dose electron irradiation and employs in situ noise diagnostic analysis to demonstrate the correlation of irradiation-induced defects and microscopic electronic properties. It is found that the electron beam has a strong radiation destructive effect on 4H-SiC SBDs. The on-line electron-induced current and noise information reveal a self-healing like procedure, in which the internal defects of the devices are likely to be annealed at room temperature and devices’ performance is restored to some extent.

Temperature-dependent electrical properties of β-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates

2019 ◽  
Vol 40 (1) ◽  
pp. 012801 ◽  
Author(s):  
Tsung-Han Yang ◽  
Houqiang Fu ◽  
Hong Chen ◽  
Xuanqi Huang ◽  
Jossue Montes ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Temperature Dependent
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