On the 1/f noise of triple-gate field-effect transistors with high-k gate dielectric

N. Lukyanchikova; N. Garbar; V Kudina; A. Smolanka; S. Put; C. Claeys; E. Simoen

doi:10.1063/1.3180703

On the 1/f noise of triple-gate field-effect transistors with high-k gate dielectric

Applied Physics Letters ◽

10.1063/1.3180703 ◽

2009 ◽

Vol 95 (3) ◽

pp. 032101 ◽

Cited By ~ 16

Author(s):

N. Lukyanchikova ◽

N. Garbar ◽

V Kudina ◽

A. Smolanka ◽

S. Put ◽

...

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

High K ◽

High K Gate Dielectric

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Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

2011 International Electron Devices Meeting ◽

10.1109/iedm.2011.6131661 ◽

2011 ◽

Cited By ~ 95

Author(s):

M. Radosavljevic ◽

G. Dewey ◽

D. Basu ◽

J. Boardman ◽

B. Chu-Kung ◽

...

Keyword(s):

Quantum Well ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Source Separation ◽

Thin Body ◽

High K ◽

Well Field ◽

Ingaas Quantum Well ◽

High K Gate Dielectric

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Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT

Nanoscale ◽

10.1039/c5nr01072a ◽

2015 ◽

Vol 7 (19) ◽

pp. 8695-8700 ◽

Cited By ~ 86

Author(s):

Changjian Zhou ◽

Xinsheng Wang ◽

Salahuddin Raju ◽

Ziyuan Lin ◽

Daniel Villaroman ◽

...

Keyword(s):

Low Power ◽

Field Effect ◽

Gate Dielectric ◽

Low Voltage ◽

Field Effect Transistors ◽

Power Device ◽

Enhancement Mode ◽

High K ◽

High K Gate Dielectric

Ultra high-k dielectric enables low-voltage enhancement-mode MoS2 transistor with high ON/OFF ratio, leading to low-power device.

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Trap evaluations of metal/oxide/silicon field-effect transistors with high-k gate dielectric using charge pumping method

Applied Physics Letters ◽

10.1063/1.1506776 ◽

2002 ◽

Vol 81 (11) ◽

pp. 2050-2052 ◽

Cited By ~ 21

Author(s):

Ga-Won Lee ◽

Jae-Hee Lee ◽

Hae-Wang Lee ◽

Myoung-Kyu Park ◽

Dae-Gwan Kang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Charge Pumping ◽

High K ◽

Metal Oxide Silicon ◽

High K Gate Dielectric

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Low Voltage Pentacene Organic Field Effect Transistors with High-K Gate Dielectric

Physics of Semiconductor Devices - Environmental Science and Engineering ◽

10.1007/978-3-319-03002-9_233 ◽

2014 ◽

pp. 905-906 ◽

Cited By ~ 2

Author(s):

Sarita Yadav ◽

Subhasis Ghosh

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Low Voltage ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

High K ◽

High K Gate Dielectric

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Performance of High-k Gate Dielectric Graphene Field-effect Devices

ECS Meeting Abstracts ◽

10.1149/ma2009-01/38/1315 ◽

2009 ◽

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

High K ◽

Field Effect Devices ◽

High K Gate Dielectric

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Impact of high-k gate dielectric with different angles of coverage on the electrical characteristics of gate-all-around field effect transistor: A simulation study

Results in Physics ◽

10.1016/j.rinp.2019.102823 ◽

2020 ◽

Vol 16 ◽

pp. 102823 ◽

Cited By ~ 2

Author(s):

Mohammad Karbalaei ◽

Daryoosh Dideban ◽

Hadi Heidari

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Electrical Characteristics ◽

High K ◽

Effect Transistor ◽

High K Gate Dielectric

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Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications

2009 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2009.5424361 ◽

2009 ◽

Cited By ~ 48

Author(s):

M. Radosavljevic ◽

B. Chu-Kung ◽

S. Corcoran ◽

G. Dewey ◽

M. K. Hudait ◽

...

Keyword(s):

Quantum Well ◽

Silicon Substrate ◽

Field Effect ◽

High Performance ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Short Channel ◽

High K ◽

Well Field ◽

Low Power Logic

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Stability of pentacene organic field effect transistors with a low-k polymer/high-k oxide two-layer gate dielectric

Materials Science and Engineering C ◽

10.1016/j.msec.2005.10.030 ◽

2006 ◽

Vol 26 (2-3) ◽

pp. 421-426 ◽

Cited By ~ 33

Author(s):

A.L. Deman ◽

J. Tardy

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

High K ◽

Low K

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Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric

Applied Physics Letters ◽

10.1063/1.4791676 ◽

2013 ◽

Vol 102 (7) ◽

pp. 073507 ◽

Cited By ~ 4

Author(s):

Jyun-Yu Tsai ◽

Ting-Chang Chang ◽

Wen-Hung Lo ◽

Ching-En Chen ◽

Szu-Han Ho ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hole Injection ◽

Hot Carrier ◽

High K ◽

Hot Carrier Degradation

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Radio-frequency performance of a sub-100 nm metal-oxide field-effect transistor with high-k gate dielectric

Semiconductor Science and Technology ◽

10.1088/0268-1242/25/4/045029 ◽

2010 ◽

Vol 25 (4) ◽

pp. 045029 ◽

Cited By ~ 1

Author(s):

K Kakushima ◽

M Nakagawa ◽

P Ahmet ◽

K Tsutsui ◽

N Sugii ◽

...

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

High K ◽

Effect Transistor ◽

High K Gate Dielectric

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