scholarly journals Mobility oscillation by one-dimensional quantum confinement in Si-nanowire metal-oxide-semiconductor field effect transistors

2009 ◽  
Vol 106 (3) ◽  
pp. 034312 ◽  
Author(s):  
Hironori Yoshioka ◽  
Naoya Morioka ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Metal Oxide ◽  
Quantum Confinement ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
One Dimensional ◽  
Si Nanowire

Effective mobility in p-channel Si–SiGe metal oxide semiconductor field effect transistors (MOSFETs)

1992 ◽  
Vol 70 (10-11) ◽  
pp. 959-962 ◽  
Author(s):  
T. Manku ◽  
A. Nathan
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Weighted Average ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Misfit Dislocations ◽  
One Dimensional ◽  
Effective Mobility ◽  
Effect Transistor

In this paper calculated results of the effective mobility in p-channel Si–SiGe metal oxide semiconductor field effect transistor (MOSFET) like structures are presented. The mobility is described in terms of a weighted average with the corresponding carrier concentrations at the SiO2–Si interface and the Si–SiGe interface. The carrier concentrations at these two interfaces were obtained by a one-dimensional numerical solution to Poisson's equation, under pertinent boundary and interface conditions. The results indicate a significant enhancement in the effective mobility, if there are no misfit dislocations present at the Si–SiGe interface.

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