Effective mobility in p-channel Si–SiGe metal oxide semiconductor field effect transistors (MOSFETs)
Keyword(s):
In this paper calculated results of the effective mobility in p-channel Si–SiGe metal oxide semiconductor field effect transistor (MOSFET) like structures are presented. The mobility is described in terms of a weighted average with the corresponding carrier concentrations at the SiO2–Si interface and the Si–SiGe interface. The carrier concentrations at these two interfaces were obtained by a one-dimensional numerical solution to Poisson's equation, under pertinent boundary and interface conditions. The results indicate a significant enhancement in the effective mobility, if there are no misfit dislocations present at the Si–SiGe interface.
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