Mobility and carrier‐concentration profiles ofP+ion‐implanted, isothermally annealed silicon crystals

Journal of Applied Physics ◽

10.1063/1.329988 ◽

1982 ◽

Vol 53 (1) ◽

pp. 774-776 ◽

Author(s):

T. Mitsuishi ◽

Y. Sasaki ◽

Huynh van Thieu ◽

N. Yoshihiro

Keyword(s):

Carrier Concentration ◽

Concentration Profiles ◽

Silicon Crystals ◽

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Experimental method for measuring both atom and carrier concentration profiles in the same sample of ion-implanted silicon layers by radioactive-ion implantation

Nuclear Instruments and Methods ◽

10.1016/0029-554x(75)90307-9 ◽

1975 ◽

Vol 127 (1) ◽

pp. 93-98 ◽

Author(s):

Masaya Iwaki ◽

Kenji Gamo ◽

Kohzo Masuda ◽

Susumu Namba ◽

Shinji Ishihara ◽

...

Keyword(s):

Ion Implantation ◽

Experimental Method ◽

Carrier Concentration ◽

Concentration Profiles ◽

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ChemInform Abstract: ANODIC OXIDATION AND ELECTRICAL CARRIER CONCENTRATION PROFILES OF ION-IMPLANTED INDIUM PHOSPHIDE

Chemischer Informationsdienst ◽

10.1002/chin.197915015 ◽

1979 ◽

Vol 10 (15) ◽

Author(s):

J. P. LORENZO ◽

D. E. DAVIES ◽

T. G. RYAN

Keyword(s):

Indium Phosphide ◽

Carrier Concentration ◽

Anodic Oxidation ◽

Concentration Profiles ◽

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Mobility and carrier concentration profiles in ion-implanted layers on doped and undoped semi-insulating GaAs substrates at 299 and 105 K

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1982.20685 ◽

1982 ◽

Vol 29 (2) ◽

pp. 205-211 ◽

Author(s):

M.B. Das ◽

Bonggi Kim

Keyword(s):

Carrier Concentration ◽

Concentration Profiles ◽

Gaas Substrates ◽

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CARRIER CONCENTRATION PROFILES OF ION‐IMPLANTED SILICON

Applied Physics Letters ◽

10.1063/1.1653013 ◽

1970 ◽

Vol 16 (1) ◽

pp. 13-15 ◽

Author(s):

R. Bader ◽

S. Kalbitzer

Keyword(s):

Carrier Concentration ◽

Concentration Profiles ◽

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Ion-implanted bipolar transistor carrier concentration profiles

Solid-State Electronics ◽

10.1016/0038-1101(73)90180-9 ◽

1973 ◽

Vol 16 (4) ◽

pp. 433-440 ◽

Author(s):

M.K. Barnoski ◽

D.D. Loper

Keyword(s):

Carrier Concentration ◽

Bipolar Transistor ◽

Concentration Profiles ◽

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Anodic Oxidation and Electrical Carrier Concentration Profiles of Ion‐Implanted InP

Journal of The Electrochemical Society ◽

10.1149/1.2128965 ◽

1979 ◽

Vol 126 (1) ◽

pp. 118-121 ◽

Author(s):

J. P. Lorenzo ◽

D. Eirug Davies ◽

T. G. Ryan

Keyword(s):

Carrier Concentration ◽

Anodic Oxidation ◽

Concentration Profiles ◽

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Ion-implanted bipolar transistor carrier concentration profiles

Microelectronics Reliability ◽

10.1016/0026-2714(73)90319-3 ◽

1973 ◽

Vol 12 (4) ◽

pp. 283

Keyword(s):

Carrier Concentration ◽

Bipolar Transistor ◽

Concentration Profiles ◽

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Control of Secondary Defects by Tin Diffusion in Ion Implanted Silicon Crystals

Ion Implantation in Semiconductors ◽

10.1007/978-1-4684-2151-4_72 ◽

1975 ◽

pp. 577-584

Author(s):

G. Nakamura ◽

Y. Yukimoto ◽

Y. Hirose

Keyword(s):

Silicon Crystals ◽

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Carrier concentration profiles in multiply implanted silicon with 0.5–7.5 MeV phosphorus

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(89)90819-7 ◽

1989 ◽

Vol 39 (1-4) ◽

pp. 428-432 ◽

Author(s):

Wu Yuguang ◽

Zhang Huixing ◽

Zhang Xioji ◽

Luo Yan ◽

Zhang Tonghe ◽

...

Keyword(s):

Carrier Concentration ◽

Concentration Profiles

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Computer controlled spreading resistance system for measurement of carrier concentration profiles of silicon structures

Czechoslovak Journal of Physics ◽

10.1007/bf01607584 ◽

1993 ◽

Vol 43 (7) ◽

pp. 723-731

Author(s):

Otto Csabay ◽

Marian Jamrich ◽

Helmar Frank

Keyword(s):

Carrier Concentration ◽

Concentration Profiles ◽

Spreading Resistance ◽

Resistance System ◽

Silicon Structures ◽

Computer Controlled

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