Experimental method for measuring both atom and carrier concentration profiles in the same sample of ion-implanted silicon layers by radioactive-ion implantation

1975 ◽  
Vol 127 (1) ◽  
pp. 93-98 ◽  
Author(s):  
Masaya Iwaki ◽  
Kenji Gamo ◽  
Kohzo Masuda ◽  
Susumu Namba ◽  
Shinji Ishihara ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Experimental Method ◽  
Carrier Concentration ◽  
Concentration Profiles ◽  
Ion Implanted

Mobility and carrier‐concentration profiles ofP+ion‐implanted, isothermally annealed silicon crystals

1982 ◽  
Vol 53 (1) ◽  
pp. 774-776 ◽  
Author(s):  
T. Mitsuishi ◽  
Y. Sasaki ◽  
Huynh van Thieu ◽  
N. Yoshihiro
Keyword(s):  
Carrier Concentration ◽  
Concentration Profiles ◽  
Silicon Crystals ◽  
Ion Implanted

Ion Implanted Ti-6Al-4V

1983 ◽  
Vol 27 ◽  
Author(s):  
W. C. Oliver ◽  
R. Hutchings ◽  
J. B. Pethica ◽  
E. L. Paradis ◽  
A. J. Shuskus
Keyword(s):  
Wear Resistance ◽  
Ion Implantation ◽  
Titanium Alloys ◽  
Driving Forces ◽  
Wear Behavior ◽  
Concentration Profiles ◽  
Pin On Disk ◽  
Wear Tests ◽  
Ion Implanted

ABSTRACTTitanium and many of its alloys show very poor wear resistance considering their hardness. This together with high thermodynamic driving forces to form very hard compounds between titanium and nitrogen or carbon made titanium based alloys obvious candidates for ion implantation. In this paper the effects of similar implanted concentration profiles of nitrogen and carbon in two titanium alloys are compared. The wear behavior of pin on disk wear tests are reported along with the ultramicrohardness of the four samples.

X-ray microanalysis of ion-implantation profiles in backthinned specimens

1984 ◽  
Vol 42 ◽  
pp. 578-579
Author(s):  
J. Bentley ◽  
P. Angelini
Keyword(s):  
Ion Implantation ◽  
Penetration Depth ◽  
Low Energy ◽  
Concentration Profiles ◽  
X Ray ◽  
Ion Implanted

As an alternative to the use of cross-sectioned specimens, a method which uses backthinned specimens has been developed for the measurement of concentration profiles in ion-implanted materials. The technique is less direct but avoids the sometimes insurmountable problems associated with the preparation of suitable cross-sectioned specimens and is more applicable to low-energy implants where the penetration depth is small. A series of x-ray spectra is measured in a wedge-shaped, backthinned foil.

Electrical Properties of n- and p-type In0.53Ga0.47As Layers Formed by Ion Implantation and Rapid Thermal(Flash)Anneal

1987 ◽  
Vol 92 ◽  
Author(s):  
S.G. Liu ◽  
S.Y. Narayan ◽  
C.W. Magee ◽  
C.P. Wu ◽  
F. Kolondra ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Surface Morphology ◽  
Ion Implantation ◽  
Carrier Concentration ◽  
Concentration Profiles ◽  
Electrical Characteristics ◽  
Good Surface ◽  
Active Layers ◽  
P Type ◽  
Controlled Doping

ABSTRACTRapid thermal annealing (4−7s) of 28Si and 9Be implants in VPE-grown In0.53Ga0.47As has produced n- and p-type active layers with controlled doping levels between 1017 and 3×1018 cm−3. The multiple-implant schedules were based on Rp and ΔR data derived from SIMS measurements on single-energy implants. The activated n- and p-type layers have a good surface morphology and 300 K mobilities of 3000–7000 and 100–200 cm2 /V−s, respectively. Data on implant schedules, electrical characteristics, carrier concentration profiles, and Rp /ΔRp information are presented.

As and B Ion Implantation Through Mo and into Mo-Silicide Layers for Shallow Junction Formation

1989 ◽  
Vol 157 ◽  
Author(s):  
R. Angelucci ◽  
M. Merli ◽  
S. Solmi ◽  
A. Armigliato ◽  
E. Gabilli ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Carrier Concentration ◽  
Rapid Thermal Annealing ◽  
Current Density ◽  
Reverse Current ◽  
Concentration Profiles ◽  
Leakage Currents ◽  
Junction Formation ◽  
Shallow Junctions ◽  
Silicon Interface

ABSTRACTGood quality p+/n and n+/p shallow junctions (< 0.15 um) with reverse current density of few nA/cm2 and low contact resistivity (∼ 5×10–7 Ω cm2) have been fabricated by using Mo suicide and Rapid Thermal Annealing (RTA). The processes of implantation through Mo films and into MoSi2 layers have been comparatively analysed on the basis of SIMS and carrier concentration profiles, TEM observations and DLTS measurements. In the case of n+/p diodes fabricated by ITM technology slightly worse leakage currents have been observed, in spite of the better planarity of the silicide-silicon interface exhibited by these structures.

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