Trapping center parameters in indium selenide single crystals by thermally stimulated current measurements

1983 ◽  
Vol 54 (4) ◽  
pp. 1924-1929 ◽  
Author(s):  
G. Micocci ◽  
A. Rizzo ◽  
A. Tepore
Keyword(s):  
Single Crystals ◽  
Indium Selenide ◽  
Trapping Center ◽  
Thermally Stimulated Current

ε-InSe single crystals grown by a horizontal gradient freeze method

CrystEngComm ◽  
2020 ◽  
Vol 22 (45) ◽  
pp. 7864-7869
Author(s):  
Maojun Sun ◽  
Wei Wang ◽  
Qinghua Zhao ◽  
Xuetao Gan ◽  
Yuanhui Sun ◽  
...  
Keyword(s):  
Single Crystals ◽  
Optoelectronic Device ◽  
Indium Selenide ◽  
Horizontal Gradient ◽  
Device Applications

Indium selenide (InSe) single crystals have been considered as promising candidates for future optical, electrical, and optoelectronic device applications.

Deep levels in indium selenide single crystals doped with iodine

1995 ◽  
Vol 78 (9) ◽  
pp. 5427-5430 ◽  
Author(s):  
G. Micocci ◽  
A. Tepore ◽  
R. Rella ◽  
P. Siciliano
Keyword(s):  
Single Crystals ◽  
Indium Selenide ◽  
Deep Levels

The influence of gadolinium doping on the switching effect in indium selenide single crystals

1989 ◽  
Vol 116 (2) ◽  
pp. K173-K177 ◽  
Author(s):  
A. Sh. Abdinov ◽  
A. M. Guseinov ◽  
Yu. G. Nurullaev ◽  
O. M. Sadykhov
Keyword(s):  
Single Crystals ◽  
Indium Selenide ◽  
Switching Effect ◽  
Gadolinium Doping
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