Catastrophic degradation of InGaAsP/InGaP double‐heterostructure lasers grown on (001) GaAs substrates by liquid‐phase epitaxy

1985 ◽  
Vol 58 (11) ◽  
pp. 3996-4002 ◽  
Author(s):  
Osamu Ueda ◽  
Kiyohide Wakao ◽  
Satoshi Komiya ◽  
Akio Yamaguchi ◽  
Shoji Isozumi ◽  
...  
1983 ◽  
Vol 31 ◽  
Author(s):  
O. Ueda ◽  
S. Isozumi ◽  
S. Komiya ◽  
T. Kusunoki ◽  
I. Umebu

ABSTRACTDefects in InGaAsP and InGaP crystals lattice-matched to (001)-oriented GaAs substrate successfully grown by liquid phase epitaxy, have been investigated by TEM and STEM/EDX. Typical defects observed by TEM are composition-modulated structures, dislocation loops, non-structural microdefects, and stacking faults.


1996 ◽  
Vol 37 (4) ◽  
pp. 439-443 ◽  
Author(s):  
Z. Feit ◽  
J. Fuchs ◽  
D. Kostyk ◽  
W. Jalenak

1986 ◽  
Vol 21 (8) ◽  
pp. K146-K148
Author(s):  
G. Kühn ◽  
M. Lux ◽  
E. Nowak

1984 ◽  
Vol 56 (11) ◽  
pp. 3088-3095 ◽  
Author(s):  
T. Hayakawa ◽  
N. Miyauchi ◽  
T. Suyama ◽  
S. Yamamoto ◽  
H. Hayashi ◽  
...  

1996 ◽  
Vol 169 (4) ◽  
pp. 613-620 ◽  
Author(s):  
Y. Hayakawa ◽  
S. Iida ◽  
T. Sakurai ◽  
H. Yanagida ◽  
M. Kikuzawa ◽  
...  

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