scholarly journals High‐temperature annealing characteristics of tungsten and tungsten nitride Schottky contacts to GaAs under different annealing conditions

1988 ◽  
Vol 64 (3) ◽  
pp. 1284-1291 ◽  
Author(s):  
Kin Man Yu ◽  
J. M. Jaklevic ◽  
E. E. Haller ◽  
S. K. Cheung ◽  
P. S. Kwok
Keyword(s):  
High Temperature ◽  
Schottky Contacts ◽  
Tungsten Nitride ◽  
High Temperature Annealing ◽  
Annealing Conditions ◽  
And Tungsten

Investigations of Crystalline Phases in Glasses under Various Annealing Conditions

2020 ◽  
Vol 28 ◽  
pp. 14-19
Author(s):  
Zamir V. Shomakhov ◽  
Akhmed M. Karmokov ◽  
Oleg A. Molokanov ◽  
Olga O. Molokanova ◽  
Rita Y. Karmokova ◽  
...  
Keyword(s):  
High Temperature ◽  
Structural Changes ◽  
Irreversible Processes ◽  
High Temperature Annealing ◽  
X Ray Diffraction ◽  
Structural And Phase Transformations ◽  
X Ray ◽  
Air Atmosphere ◽  
Annealing Conditions ◽  
Microchannel Plates

Studies of the temperature dependence of the electrical properties of glasses show that the high-temperature annealing in glasses observed irreversible processes. These processes lead to changes in electrical conductivity, dielectric permittivity, and hence the electrical capacitance, dielectric loss tangent, and other parameters. Obviously, this is due to structural changes in the glass as a result of high-temperature annealing. In this regard, this paper presents studies of structural and phase transformations in glasses used for the production of microchannel plates in the process of high-temperature annealing in vacuum and in the air atmosphere at different times. The studies were conducted by x-ray phase and X-ray diffraction analysis, as well as X-ray fluorescence elemental analysis.

Process-Induced Defects in High-Purity GaAs

1982 ◽  
Vol 14 ◽  
Author(s):  
P. H. Campbell ◽  
O. Aina ◽  
B. J. Baliga ◽  
R. Ehle
Keyword(s):  
High Temperature ◽  
High Purity ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Schottky Contacts ◽  
High Temperature Annealing ◽  
Order Of Magnitude ◽  
Transient Spectroscopy ◽  
Induced Defects

ABSTRACTHigh temperature annealing of Si 3 N4 and SiO2 capped high purity LPE GaAs is shown to result in a reduction in the surface carrier concentration by about an order of magnitude. Au Schottky contacts made on the annealed samples were found to have severely degraded breakdown characteristics. Using deep level transient spectroscopy, deep levels at EC–.58eV, EC–.785eV were detected in the SiO2, capped samples and EC–.62eV, EC–.728eV in the Si3N4 capped Samples while none was detected in the unannealed samples.The electrical degradations are explained in terms of compensation mechanisns and depletion layer recombination-generation currents due to the deep levels.

scholarly journals Diffusion of Dopants and Components in Arsenic-Implanted CdTe/HgCdTe Structures under Different High-Temperature Annealing Conditions

Proceedings ◽  
2019 ◽  
Vol 27 (1) ◽  
pp. 41
Author(s):  
Shi ◽  
Lin ◽  
Wei
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Magnetron Sputtering ◽  
Significant Influence ◽  
Thermal Evaporation ◽  
Layer Structure ◽  
High Temperature Annealing ◽  
Annealing Conditions ◽  
Cap Layer ◽  
Diffusion Behaviors

The CdTe cap layers were grown on CdZnTe-substrated HgCdTe (MCT) LPE epilayers by magnetron sputtering and thermal evaporation. The diffusion behaviors of Cd & Hg components and impurities (As or In) in these CdTe/MCT structures subjected to As ion implantation and various Hg overpressure annealing processes were investigated. The conclusions indicate that the defects at the CdTe/MCT interface could produce the accumulations of impurities and the distributions of induced damages (related to the cap layer structure) have a significant influence on the diffusion of components and impurities. By adjusting annealing procedures, the diffusions of components and impurities can be controlled.

Study of Titanium Tungsten Nitride and Tungsten Nitride Schottky Contacts on n-GaN

2003 ◽  
Vol 42 (Part 1, No. 7A) ◽  
pp. 4193-4196 ◽  
Author(s):  
Cheng-Shih Lee ◽  
Edward-Yi Chang ◽  
Li Chang ◽  
Chao-Yi Fang ◽  
Yao-Lin Huang ◽  
...  
Keyword(s):  
Schottky Contacts ◽  
Tungsten Nitride ◽  
And Tungsten

Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode

2005 ◽  
Vol 483-485 ◽  
pp. 721-724 ◽  
Author(s):  
Tomonori Nakamura ◽  
Toshiyuki Miyanagi ◽  
Hidekazu Tsuchida ◽  
Isaho Kamata ◽  
Tamotsu Jikimoto ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
High Voltage ◽  
Ideality Factor ◽  
Schottky Barrier Height ◽  
Schottky Contacts ◽  
Electrical Performance ◽  
High Temperature Annealing ◽  
Excess Current ◽  
Blocking Voltage

We investigated the effect of high temperature annealing on the Schottky barrier height (Fb) and the ideality factor (n-factor) of a Mo contact. In a Mo contact, the Fb increased and the leakage current decreased by annealing at 600oC, while no increase in n-factor and forward excess current owing to the high temperature annealing was observed. The Schottky barrier diode with Mo contact annealed at 600oC showed a blocking-voltage (Vb) of 4.15 kV and a specific on resistance (Ron) of 9.07 mWcm2, achieving a high Vb 2/Ron value of 1898 MW/cm2.

Electrical Properties of Ni/GaN Schottky Contacts on High-Temperature Annealed GaN Surfaces

2009 ◽  
Vol 615-617 ◽  
pp. 959-962
Author(s):  
Ferdinando Iucolano ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Giuseppe Moschetti ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Guard Ring ◽  
High Temperature Annealing ◽  
Electrical Behaviour ◽  
Power Devices ◽  
Recent Improvement ◽  
New Perspective ◽  
Density Of Interface States

The recent improvement of GaN material quality launched new perspective for its application in power devices. However, ion-implanted guard-ring edge terminations, necessary to improve the breakdown voltage, are not well developed as in SiC technology. Indeed, the effects of high-temperature annealing, required for the electrical activation of the implanted species in GaN, on the electrical behaviour of Schottky contact was not reported. In this work, the influence of high temperature annealing (1150-1200°C) on the surface morphology of GaN and on the electrical behaviour of Schottky contact was studied. Although the morphology of GaN surface did not substantially change after annealing, a worsening of the electrical behaviour of Schottky contact was observed. This latter was ascribed to the formation of a high density of interface states after annealing.

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