Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Atomic layer deposition of ZrO2as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

Applied Physics Letters ◽

10.1063/1.4824445 ◽

2013 ◽

Vol 103 (14) ◽

pp. 142109 ◽

Cited By ~ 45

Author(s):

G. Ye ◽

H. Wang ◽

S. Arulkumaran ◽

G. I. Ng ◽

R. Hofstetter ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

Gate Dielectrics ◽

Atomic Layer ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Layer Deposition

High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN∕GaN high electron mobility transistors

Electronics Letters ◽

10.1049/el:20030525 ◽

2003 ◽

Vol 39 (10) ◽

pp. 809 ◽

Cited By ~ 3

Author(s):

B. Luo ◽

R. Mehandru ◽

Jihyun Kim ◽

F. Ren ◽

B.P. Gila ◽

...

Keyword(s):

Output Power ◽

Breakdown Voltage ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using Double Buried p-Type Layers

Chinese Physics Letters ◽

10.1088/0256-307x/33/6/067301 ◽

2016 ◽

Vol 33 (6) ◽

pp. 067301 ◽

Cited By ~ 2

Author(s):

Jun Luo ◽

Sheng-Lei Zhao ◽

Zhi-Yu Lin ◽

Jin-Cheng Zhang ◽

Xiao-Hua Ma ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

P Type

Evaluation of AlGaN/GaN metal–oxide–semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.094101 ◽

2017 ◽

Vol 56 (9) ◽

pp. 094101

Author(s):

Yu Sheng Chiu ◽

Quang Ho Luc ◽

Yueh Chin Lin ◽

Jui Chien Huang ◽

Chang Fu Dee ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Electron Mobility ◽

Atomic Layer ◽

High Electron ◽

Rf Power ◽

High Electron Mobility ◽

Layer Deposition

Improved breakdown voltage and RF characteristics in AlGaN/GaN high-electron-mobility transistors achieved by slant field plates

Applied Physics Express ◽

10.7567/apex.7.096501 ◽

2014 ◽

Vol 7 (9) ◽

pp. 096501 ◽

Cited By ~ 2

Author(s):

Kengo Kobayashi ◽

Shinya Hatakeyama ◽

Tomohiro Yoshida ◽

Yuhei Yabe ◽

Daniel Piedra ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides

Applied Physics Express ◽

10.7567/apex.8.084101 ◽

2015 ◽

Vol 8 (8) ◽

pp. 084101 ◽

Cited By ~ 1

Author(s):

Po-Chun Yeh ◽

Yun-Wei Lin ◽

Yue-Lin Huang ◽

Jui-Hung Hung ◽

Bo-Ren Lin ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Threshold Voltage ◽

Electron Mobility ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Layer Deposition ◽

Gate Recess

1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate

IEEE Electron Device Letters ◽

10.1109/led.2012.2207367 ◽

2012 ◽

Vol 33 (10) ◽

pp. 1375-1377 ◽

Cited By ~ 63

Author(s):

Susai Lawrence Selvaraj ◽

Arata Watanabe ◽

Akio Wakejima ◽

Takashi Egawa

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

Silicon Substrate ◽

High Electron ◽

High Electron Mobility ◽

Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors

physica status solidi (a) ◽

10.1002/pssa.201900766 ◽

2020 ◽

Vol 217 (5) ◽

pp. 1900766

Author(s):

Sandeep Kumar ◽

Surani Bin Dolmanan ◽

Sudhiranjan Tripathy ◽

Rangarajan Muralidharan ◽

Digbijoy Neelim Nath

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Effects of process temperature during atomic layer deposition using water and ozone as oxidants on current–voltage characteristics of Al2O3/AlGaN/GaN high-electron-mobility transistors on Si substrates

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.020301 ◽

2015 ◽

Vol 54 (2) ◽

pp. 020301 ◽

Cited By ~ 5

Author(s):

Toshiharu Kubo ◽

Joseph J. Freedsman ◽

Yusuke Yoshida ◽

Takashi Egawa

Keyword(s):

Electron Mobility ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Si Substrates ◽

Layer Deposition ◽

Current Voltage ◽

Current Voltage Characteristics

Breakdown voltage analysis of Al 0.25 Ga 0.75 N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

Chinese Physics B ◽

10.1088/1674-1056/21/5/057201 ◽

2012 ◽

Vol 21 (5) ◽

pp. 057201 ◽

Cited By ~ 4

Author(s):

Bao-Xing Duan ◽

Yin-Tang Yang

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

High Electron ◽

Algan Layer ◽

Silicon Doping ◽

High Electron Mobility ◽