Quantum well thickness dependence of Rashba spin–orbit coupling in the InAs/InGaAs heterostructure

2011 ◽  
Vol 98 (20) ◽  
pp. 202504 ◽  
Author(s):  
Tae Young Lee ◽  
Joonyeon Chang ◽  
Mark C. Hickey ◽  
Hyun Cheol Koo ◽  
Hyung-jun Kim ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thickness Dependence ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Rashba Spin

SPIN-ORBIT ENHANCED POLARON IN A SINGLE QUANTUM WELL

2011 ◽  
Vol 25 (32) ◽  
pp. 2461-2468
Author(s):  
S. PANDA ◽  
B. K. PANDA
Keyword(s):  
Quantum Well ◽  
Orbit Coupling ◽  
Electron Interaction ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Rashba Spin ◽  
Asymmetric Quantum ◽  
Longitudinal Optic Phonon

The polaronic corrections to the electron energy and effective mass are calculated taking the Rashba spin-orbit coupling in the compositionally asymmetric single quantum well based on heterostructures of narrow gap semiconductors InGaAs and InAs . The electron interaction with the confined longitudinal optic phonon is considered in the Fröhlich form for calculating the polaron properties. In the weak coupling limit, the polaron properties are enhanced by the Rashba spin-orbit coupling in the asymmetric quantum well.

Effect of Hetero-Interfaces on Rashba Spin-Orbit Coupling in a Gated In0.53Ga0.47As/InP Quantum Well Structure

2011 ◽  
Vol 415-417 ◽  
pp. 1988-1991
Author(s):  
Yuan Ming Zhou
Keyword(s):  
Quantum Well ◽  
Gate Voltage ◽  
Coupling Parameter ◽  
Potential Profile ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Interfacial Layers ◽  
Quantum Well Structure ◽  
Rashba Spin

We investigate the values of the Rashba spin-orbit coupling parameter α in a gated In0.53Ga0.47As/InP quantum well structure using the k•p formalism. With more positive gate voltage applied, the quantum well potential profile becomes more symmetric and the value of α decreases. The theoretical values of α are much smaller than experimental ones. The discrepancy can be reasonably explained by the neglect of the interface contribution in the k•p formalism and the formation of additional InAsxP1-xand GaxIn1-xAsyP1-yinterfacial layers in our sample.

Strain Effects on Rashba Spin‐Orbit Coupling of 2D Hole Gases in GeSn/Ge Heterostructures

2021 ◽  
pp. 2007862
Author(s):  
Chia‐Tse Tai ◽  
Po‐Yuan Chiu ◽  
Chia‐You Liu ◽  
Hsiang‐Shun Kao ◽  
C. Thomas Harris ◽  
...  
Keyword(s):  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Strain Effects ◽  
Rashba Spin

scholarly journals Random Rashba spin-orbit coupling at the quantum spin Hall edge

2014 ◽  
Vol 89 (23) ◽  
Author(s):  
Florian Geissler ◽  
François Crépin ◽  
Björn Trauzettel
Keyword(s):  
Quantum Spin ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Rashba Spin ◽  
Quantum Spin Hall

Generation of Rashba Spin–Orbit Coupling in CdSe Nanowire by Ionic Liquid Gate

Nano Letters ◽  
2015 ◽  
Vol 15 (2) ◽  
pp. 1152-1157 ◽  
Author(s):  
Shan Zhang ◽  
Ning Tang ◽  
Weifeng Jin ◽  
Junxi Duan ◽  
Xin He ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Rashba Spin

Persistent Spin Current in a Quantum Wire with Weak Rashba Spin–Orbit Coupling

2006 ◽  
Vol 23 (11) ◽  
pp. 3065-3068 ◽  
Author(s):  
Wang Yi ◽  
Sheng Wei ◽  
Zhou Guang-Hui
Keyword(s):  
Quantum Wire ◽  
Spin Current ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Rashba Spin
Sign in / Sign up

Export Citation Format

Share Document