Low temperature electroluminescence spectroscopy of high electron mobility transistors on InP

1996 ◽  
Vol 80 (1) ◽  
pp. 464-469 ◽  
Author(s):  
A. Sylvestre ◽  
F. Aniel ◽  
P. Boucaud ◽  
F. H. Julien ◽  
P. Crozat ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

2014 ◽  
Vol 2014 ◽  
pp. 1-4 ◽  
Author(s):  
P. C. Chang ◽  
K. H. Lee ◽  
Z. H. Wang ◽  
S. J. Chang
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
Electron Mobility ◽  
Defect Density ◽  
High Electron Mobility Transistors ◽  
Crystalline Quality ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Buffer Design

We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

On the Pseudomorphic High Electron Mobility Transistors (PHEMTs) With a Low-Temperature Gate Approach

2009 ◽  
Vol 30 (4) ◽  
pp. 325-327 ◽  
Author(s):  
Li-Yang Chen ◽  
Huey-Ing Chen ◽  
Shiou-Ying Cheng ◽  
Tzu-Pin Chen ◽  
Tsung-Han Tsai ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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