The antiphase boundary in half-metallic Heusler alloy           Co2Fe(Al,Si): atomic structure, spin polarization reversal, and domain wall           effects

The structure, electronic and magnetic properties of full-Heusler alloy Co2TiGa are investigated by means of the full potential linearized augmented plane-wave method. Our results show that the ground state of Co2TiGa is of the nearly half-metallic ferromagnetism with a magnetic moment of 1.00218μBper unit cell, which are contributed by the atoms Co and Ti. Meanwhile, the spin polarization around the Fermi level is up to 93.2%, almost 100%, which indicates that full-Heusler alloy Co2TiGa with the well magnetism and spin polarization would be possibly applied to the field of the material engineering and information technology.

Download Full-text

A Landau-Ginzburg Description of Sb Overlayers

MRS Proceedings ◽

10.1557/proc-674-u7.10 ◽

2001 ◽

Vol 674 ◽

Cited By ~ 1

Author(s):

R. Skomski ◽

T. Komesu ◽

H.-K. Jeong ◽

C. N. Borca ◽

P. A. Dowben ◽

...

Keyword(s):

Spin Polarization ◽

Heusler Alloy ◽

Function Approximation ◽

Gaussian Approximation ◽

Temperature Dependent ◽

Half Metallic ◽

Spin Polarized ◽

Spin Excitations ◽

Injection Depth ◽

Inverse Photoemission Spectroscopy

ABSTRACTThe spin polarization of Sb overlayers on the semi-Heusler alloy NiMnSb is investigated in terms of the Landau-Ginzburg approach. The half-metallic semi-Heusler alloy NiMnSb acts as a ferromagnetic perturbation and induces a spin polarization in the semimetallic Sb overlayer. Using a Gaussian approximation, the propagation of the spin perturbation in the overlayer is calculated. The results are compared with spin-polarized inverse photoemission spectroscopy (SPIPES) results and with recent spin-dependent envelope-function approximation (SDEFA) predictions. The Landau-Ginzburg parameters are both band-structure and temperature dependent, and it is argued that thermal spin excitations lead to an injection depth decreasing as 1//T law at high temperatures.

Download Full-text

The effect of atomic structure on interface spin-polarization of half-metallic spin valves: Co2MnSi/Ag epitaxial interfaces

Applied Physics Letters ◽

10.1063/1.4936630 ◽

2015 ◽

Vol 107 (21) ◽

pp. 212404 ◽

Cited By ~ 11

Author(s):

Zlatko Nedelkoski ◽

Philip J. Hasnip ◽

Ana M. Sanchez ◽

Balati Kuerbanjiang ◽

Edward Higgins ◽

...

Keyword(s):

Spin Polarization ◽

Atomic Structure ◽

Spin Valves ◽

Half Metallic

Download Full-text

Quantification of site disorder and its role on spin polarization in the nearly half-metallic Heusler alloy NiFeMnSn

Physical Review B ◽

10.1103/physrevb.94.214423 ◽

2016 ◽

Vol 94 (21) ◽

Cited By ~ 9

Author(s):

M. D. Mukadam ◽

Syamashree Roy ◽

S. S. Meena ◽

Pramod Bhatt ◽

S. M. Yusuf

Keyword(s):

Spin Polarization ◽

Heusler Alloy ◽

Half Metallic ◽

Site Disorder

Download Full-text

Tunnel magnetoresistance effect and magnetic damping in half-metallic Heusler alloys

Philosophical Transactions of The Royal Society A Mathematical Physical and Engineering Sciences ◽

10.1098/rsta.2011.0011 ◽

2011 ◽

Vol 369 (1948) ◽

pp. 3037-3053 ◽

Cited By ~ 20

Author(s):

M. Oogane ◽

S. Mizukami

Keyword(s):

Spin Polarization ◽

High Spin ◽

Heusler Alloy ◽

Heusler Alloys ◽

Magnetoresistance Effect ◽

Half Metallicity ◽

Half Metallic ◽

Tunnel Magnetoresistance ◽

Magnetic Damping ◽

High Spin Polarization

Some full-Heusler alloys, such as Co 2 MnSi and Co 2 MnGe, are expected to be half-metallic ferromagnetic material, which has complete spin polarization. They are the most promising materials for realizing half-metallicity at room temperature owing to their high Curie temperature. We demonstrate a huge tunnel magnetoresistance effect in a magnetic tunnel junction using a Co 2 MnSi Heusler alloy electrode. This result proves high spin polarization of the Heusler alloy. We also demonstrate a small magnetic damping constant in Co 2 FeAl epitaxial film. The very high spin polarization and small magnetic constant of Heusler alloys will be a great advantage for future spintronic device applications.

Download Full-text