Accuracy and form of off-resonance time-resolved Kerr rotation spectroscopy

2019 ◽  
Vol 115 (14) ◽  
pp. 142401
Author(s):  
Mehmet A. Noyan ◽  
James M. Kikkawa
Keyword(s):  
Kerr Rotation ◽  
Time Resolved

Nonexponential decoherence of collective spin states in 2DES probed by time-resolved Kerr rotation

2021 ◽  
pp. 114285
Author(s):  
E. Stepanets-Khussein ◽  
L.I. Musina ◽  
A.V. Larionov ◽  
A.S. Zhuravlev ◽  
I.V. Kukushkin ◽  
...  
Keyword(s):  
Spin States ◽  
Kerr Rotation ◽  
Time Resolved

scholarly journals Spin relaxation induced by interfacial effects in n-GaN/MgO/Co spin injectors

RSC Advances ◽  
2020 ◽  
Vol 10 (21) ◽  
pp. 12547-12553
Author(s):  
Xingchen Liu ◽  
Ning Tang ◽  
Chi Fang ◽  
Caihua Wan ◽  
Shixiong Zhang ◽  
...  
Keyword(s):  
Spin Relaxation ◽  
Kerr Rotation ◽  
Time Resolved ◽  
Interfacial Effects ◽  
Hanle Effect ◽  
Spin Injectors ◽  
Rotation Spectrum

The interface-related spin relaxation in n-GaN/MgO/Co was investigated by both electrical Hanle effect and time resolved Kerr rotation spectrum.

Determination ofs-dexchange coupling in GaMnN by time-resolved Kerr rotation spectroscopy

2014 ◽  
Vol 90 (12) ◽  
Author(s):  
Wei-Ting Hsu ◽  
Ting-Yen Hsieh ◽  
Hsin-Feng Chen ◽  
Feng-Wen Huang ◽  
Po-Cheng Chen ◽  
...  
Keyword(s):  
Kerr Rotation ◽  
Time Resolved

Time-resolved photoinduced Kerr rotation in semiconductor microcavity

2009 ◽  
Vol 6 (1) ◽  
pp. 292-295
Author(s):  
Y. Mitsumori ◽  
N. Kato ◽  
H. Kosaka ◽  
K. Edamatsu ◽  
N. Yamamoto ◽  
...  
Keyword(s):  
Kerr Rotation ◽  
Time Resolved ◽  
Semiconductor Microcavity

Laser Interactions with Optical Recording Materials

1986 ◽  
Vol 74 ◽  
Author(s):  
Ernesto E. Marinero
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Magnetic Domain ◽  
Optical Recording ◽  
Single Element ◽  
Material Research ◽  
Tem Analysis ◽  
Kerr Rotation ◽  
Time Resolved ◽  
Laser Interactions

AbstractLaser-material interactions are pivotal to optical storage technology. Laser quenching and thermomagnetic processes form the memory basis for approaches based on “phase-change” materials and magneto-optical alloys respectively. Recent progress in phase-change materials indicates that compound semiconductors as well as single element materials are characterized by fast crystallization times. In this work we review, utilizing time-resolved optical and conductivity probes, the melt-kinetics and glass formation processes in Te thin films and the laser-induced crystallization of amorphous GeTe. The latter studies are complemented by x-ray diffraction and TEM analysis. Results are also presented on time-resolved Kerr rotation studies to investigate the magnetic domain formation kinetics in thermo-magnetic recording. Material research problems facing laser interactions with optical recording materials will be discussed.

scholarly journals Optically initialized robust valley-polarized holes in monolayer WSe2

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Wei-Ting Hsu ◽  
Yen-Lun Chen ◽  
Chang-Hsiao Chen ◽  
Pang-Shiuan Liu ◽  
Tuo-Hung Hou ◽  
...  
Keyword(s):  
Transition Metal ◽  
Low Temperatures ◽  
Room Temperature ◽  
Optical Pumping ◽  
Transition Metal Dichalcogenides ◽  
Kerr Rotation ◽  
Time Resolved ◽  
Recombination Lifetime ◽  
Valley Polarization ◽  
Metal Dichalcogenides

Abstract A robust valley polarization is a key prerequisite for exploiting valley pseudospin to carry information in next-generation electronics and optoelectronics. Although monolayer transition metal dichalcogenides with inherent spin–valley coupling offer a unique platform to develop such valleytronic devices, the anticipated long-lived valley pseudospin has not been observed yet. Here we demonstrate that robust valley-polarized holes in monolayer WSe2 can be initialized by optical pumping. Using time-resolved Kerr rotation spectroscopy, we observe a long-lived valley polarization for positive trion with a lifetime approaching 1 ns at low temperatures, which is much longer than the trion recombination lifetime (∼10–20 ps). The long-lived valley polarization arises from the transfer of valley pseudospin from photocarriers to resident holes in a specific valley. The optically initialized valley pseudospin of holes remains robust even at room temperature, which opens up the possibility to realize room-temperature valleytronics based on transition metal dichalcogenides.

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