Robust Half-Metallic Character In KMnGe Half-Heusler Compound

The search for spin injectors and spin sources in spintronic devices is a significant facet of materials research today. Consequently, half-Heusler (HAH) KMnGe alloy has been recommended as one such admissible materials. Herein, a rigorous examination of the structural, magnetic and electronic properties of HAH KMnGe alloy is done using ab initio method within the bolstered up rendition of the functional by Perdew and his group. Our result shows that HAH KmnGe alloy expresses type-1 and type-2 HAH structural ground state at high and low pressures respectively, which may pose a challenge in application. Impressively, HAH KMnGe alloy exhibits half metallic characteristic with an indirect energy gap in the Γ-X symmetry k-point and direct band gap at X-point in the minority electronic spin states for type-1 and type-2 phase respectively. Our findings agree fundamentally with some previous findings in the literature and suggests that the HAH KMnGe alloy is a credible excellent spin source in future spintronic devices.

Robust Half-Metallic Character In KMnGe Half-Heusler Compound

The search for spin injectors and spin sources in spintronic devices is a significant facet of materials research today. Consequently, half-Heusler (HAH) KMnGe alloy has been recommended as one such admissible materials. Herein, a rigorous examination of the structural, magnetic and electronic properties of HAH KMnGe alloy is done using ab initio method within the bolstered up rendition of the functional by Perdew and his group. Our result shows that HAH KmnGe alloy expresses type-1 and type-2 HAH structural ground state at high and low pressures respectively, which may pose a challenge in application. Impressively, HAH KMnGe alloy exhibits half metallic characteristic with an indirect energy gap in the Γ-X symmetry k-point and direct band gap at X-point in the minority electronic spin states for type-1 and type-2 phase respectively. Our findings agree fundamentally with some previous findings in the literature and suggests that the HAH KMnGe alloy is a credible excellent spin source in future spintronic devices.

Spin relaxation induced by interfacial effects in n-GaN/MgO/Co spin injectors

The interface-related spin relaxation in n-GaN/MgO/Co was investigated by both electrical Hanle effect and time resolved Kerr rotation spectrum.

Creation of Electrical Spin Injectors for Silicon Spintronics: Achievements and Prospects

Literature data on the effective electrical injectors of electron spin for silicon spintronics and stages of the investigation of corresponding magnetic tunnel contacts are reviewed up to 2015 year and a consideration of the current state of the research is given. Different structures for the spin injection, materials and possible applications in silicon spintronics are considered and also possible future research directions are outlined.