Low‐temperature native oxide removal from silicon using nitrogen trifluoride prior to low‐temperature silicon epitaxy

1988 ◽  
Vol 53 (15) ◽  
pp. 1423-1425 ◽  
Author(s):  
G. P. Burns
Keyword(s):  
Low Temperature ◽  
Native Oxide ◽  
Nitrogen Trifluoride ◽  
Silicon Epitaxy ◽  
Oxide Removal

A Complementary Wafer Cleaning and Growth Process for Low Temperature, Defect Free, Selective Silicon Epitaxy

1992 ◽  
Vol 259 ◽  
Author(s):  
Jon T. Fitch ◽  
Dean J. Denning
Keyword(s):  
Steady State ◽  
Low Temperature ◽  
Growth Process ◽  
Process Integration ◽  
Native Oxide ◽  
Growth Processes ◽  
Silicon Epitaxy ◽  
Wafer Cleaning ◽  
Cvd Growth ◽  
Oxide Removal

ABSTRACTLow temperature (<850°C) defect free selective silicon epitaxy has been achieved with a conventional barrel type reactor (base pressure -10−4 Torr) using complementary cleaning and growth processes: a wet multi-step oxidizing clean, and a novel non-steady state CVD growth process. With this combination of cleaning and growth processes, it is shown that the need for a high temperature (950-1000°C) insitu native oxide removal step, which may be incompatible with advanced VLSI process integration, is eliminated.

The Effects of Surface Treatments for Low Temperature Silicon Dioxide Deposition on Cadmium Telluride.

1988 ◽  
Vol 131 ◽  
Author(s):  
Seong S. Choi ◽  
S. S. Kim ◽  
D. V. Tsu ◽  
G. Lucovsky
Keyword(s):  
Low Temperature ◽  
Plasma Treatment ◽  
Cadmium Telluride ◽  
Chemical Vapor ◽  
High Energy ◽  
Native Oxide ◽  
Strong Adhesion ◽  
Cdte Substrate ◽  
Oxide Removal ◽  
Cdte Surface

ABSTRACTWe have successfully deposited thin films of SiO2 on a cadmium telluride substrate at low temperature (Ts =100°C–300°C) by remote plasma enhanced chemical vapor deposition (Remote PECVD). The native oxide on the CdTe substrate has been removed, prior to deposition by either chemical etching in methanol and 1% bromine, or by dissolution in deionized water. After removal of the native oxide, the CdTe was inserted into a UHV-compatible deposition chamber and a He+ plasma treatment was performed prior to deposition of an SiO2 film. This treatment promotes strong adhesion between the deposited SiO2 film and the CdTe surface. We find that the initial oxide removal process does not influence SiO2 adhesion. The effect of the He+ plasma treatment on the CdTe surface has been studied by Auger electron spectroscopy(AES), and Reflection high energy electron diffraction (RHEED).

Low temperature silicon epitaxy by photo- and plasma-CVD

1988 ◽  
Author(s):  
A. Yamada ◽  
A. Satoh ◽  
M. Konagai ◽  
K. Takahashi
Keyword(s):  
Low Temperature ◽  
Plasma Cvd ◽  
Silicon Epitaxy

Investigation of Thermal Removal of Native Oxide from Si (100) Surfaces in Hydrogen for Low‐Temperature Si CVD Epitaxy

1992 ◽  
Vol 139 (4) ◽  
pp. 1175-1180 ◽  
Author(s):  
Tatsuya Yamazaki ◽  
Noriyuki Miyata ◽  
Takayuki Aoyama ◽  
Takashi Ito
Keyword(s):  
Low Temperature ◽  
Native Oxide

Remote Plasma-Enhanced Chemical Vapor Deposition of Epitaxial Silicon on Silicon (100) at 150°C

1989 ◽  
Vol 165 ◽  
Author(s):  
T. Hsu ◽  
B. Anthony ◽  
L. Breaux ◽  
S. Banerjee ◽  
A. Tasch
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Hydrogen Plasma ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Silicon ◽  
Remote Plasma ◽  
Silicon Epitaxy

AbstractLow temperature processing will be an essential requirement for the device sizes, structures, and materials being considered for future integrated circuit applications. In particular, low temperature silicon epitaxy will be required for new devices and technologies utilizing three-dimensional epitaxial structures and silicon-based heterostructures. A novel technique, Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD), has achieved epitaxial silicon films at a temperature as low as 150°C which is believed to be the lowest temperature to date for silicon epitaxy. The process relies on a stringent ex-situ preparation procedure, a controlled wafer loading sequence, and an in-situ remote hydrogen plasma clean of the sample surface, all of which provide a surface free of carbon, oxygen, and other contaminants. The system is constructed using ultra-high vacuum technology (10-10 Torr) to achieve and maintain contaminantion-free surfaces and films. Plasma excitation of argon is used in lieu of thermal energy to provide energetic species that dissociate silane and affect surface chemical processes. Excellent crystallinity is observed from the thin films grown at 150°C using the analytical techniques of Transmission Electron Microscopy (TEM) and Nomarski interference contrast microscopy after defect etching.

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