Medium-range structure of amorphous silicon studied by the Voronoi—Delaunay method

1996 ◽  
Vol 88 (5) ◽  
pp. 1337-1348 ◽  
Author(s):  
V. A. LUCHNIKOV ◽  
N. N. MEDVEDEV ◽  
A. APPELHAGEN ◽  
A. GEIGER
Keyword(s):  
Amorphous Silicon ◽  
Medium Range

The Structure of Ion-Implanted Amorphous Silicon

1998 ◽  
Vol 540 ◽  
Author(s):  
J. M. Gibson ◽  
J-Y. Cheng ◽  
P. Voyles ◽  
M.M.J. TREACY ◽  
D.C. Jacobson
Keyword(s):  
Amorphous Silicon ◽  
Network Model ◽  
Random Network ◽  
Amorphous Semiconductors ◽  
Range Order ◽  
Medium Range Order ◽  
Medium Range ◽  
Large Heat ◽  
Continuous Random Network ◽  
Ion Implanted

AbstractUsing fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.

Medium-Range Order of Amorphous Silicon Germanium Alloys: Small-Angle X-Ray Scattering Study

1989 ◽  
Vol 28 (Part 2, No. 7) ◽  
pp. L1092-L1095 ◽  
Author(s):  
Shin-ichi Muramatsu ◽  
Toshikazu Shimada ◽  
Hiroshi Kajiyama ◽  
Kazufumi Azuma ◽  
Takeshi Watanabe ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Small Angle ◽  
Silicon Germanium ◽  
Range Order ◽  
Medium Range Order ◽  
X Ray ◽  
X Ray Scattering ◽  
Medium Range ◽  
Scattering Study ◽  
Amorphous Silicon Germanium

Detection of an ordered-structure fraction in amorphous silicon

2016 ◽  
Vol 49 (2) ◽  
pp. 528-532 ◽  
Author(s):  
Xiao-Dong Wang ◽  
Bo Chen ◽  
Hai-Feng Wang ◽  
Xin Zheng ◽  
Shi-Jie Liu ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Amorphous Silicon ◽  
Spectroscopic Ellipsometry ◽  
Optical Constants ◽  
Ordered Structure ◽  
Radio Frequency Magnetron Sputtering ◽  
Medium Range Order ◽  
Medium Range ◽  
Si Films

Amorphous silicon (a-Si) films were prepared by radio frequency magnetron sputtering. Spectroscopic ellipsometry (SE) was utilized to detect an ordered-structure fraction in a-Si. The SE analysis of a-Si films with different thicknesses (7.0–140.0 nm) demonstrates that no more than 2.81% of medium-range order exists in the samples, and interestingly, there is a thickness dependence of optical constants for a-Si in the range of 1.5–5.0 eV.

On the influence of short and medium range order on the material band gap in hydrogenated amorphous silicon

2004 ◽  
Vol 96 (7) ◽  
pp. 3818-3826 ◽  
Author(s):  
A. H. Mahan ◽  
R. Biswas ◽  
L. M. Gedvilas ◽  
D. L. Williamson ◽  
B. C. Pan
Keyword(s):  
Amorphous Silicon ◽  
Band Gap ◽  
Hydrogenated Amorphous Silicon ◽  
Range Order ◽  
Medium Range Order ◽  
Medium Range ◽  
Hydrogenated Amorphous

Spectroscopic Detection of Medium Range Order in Device Grade Hydrogenated Amorphous Silicon

2013 ◽  
Vol 52 (4S) ◽  
pp. 04CR10
Author(s):  
Gerry Lucovsky ◽  
Greg Parsons ◽  
Daniel Zeller ◽  
Jinwoo Kim
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Range Order ◽  
Medium Range Order ◽  
Medium Range ◽  
Hydrogenated Amorphous

Comparative Fluctuation Microscopy Study of Medium-Range Order in Hydrogenated Amorphous Silicon Deposited by Various Methods

2000 ◽  
Vol 609 ◽  
Author(s):  
P. M. Voyles ◽  
M. M. J. Treacy ◽  
H-C. Jin ◽  
J. R. Abelson ◽  
J. M. Gibson ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Amorphous Matrix ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Range Order ◽  
Medium Range Order ◽  
Medium Range ◽  
Hydrogenated Amorphous

ABSTRACTWe have characterized by fluctuation electron microscopy the medium-range order of hydrogenated amorphous silicon thin films deposited by a variety of methods. Films were deposited by reactive magnetron sputtering, hot-wire chemical vapor deposition, and plasma enhanced chemical vapor deposition with and without H2 dilution of the SiH4 precursor gas. All of the films show the signature of the paracrystalline structure typical of amorphous Si. There are small variations in the degree of medium-range order with deposition method and H content. The PECVD film grown with high H2 dilution contains Si crystals ∼5 nm in diameter at a density of ∼109 cm−2. The amorphous matrix surrounding these crystals shows no difference in mediumrange order from the standard PECVD film. This supports explanations of the resistance of the H-dilution material to light-induced degradation that depend only on the presence of crystalline grains without modifications of the amorphous matrix.

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