Morphological properties of one-dimensional ZnO nanostructures grown by thermal chemical vapor deposition with defferent source materials

2021 ◽  
pp. 1-8
Author(s):  
Seok Cheol Choi ◽  
Do Kyung Lee ◽  
Sang Ho Sohn
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Morphological Properties ◽  
Zno Nanostructures ◽  
One Dimensional ◽  
Thermal Chemical Vapor Deposition ◽  
Source Materials

scholarly journals Effects of Experimental Configuration on the Morphology of Two-Dimensional ZnO Nanostructures Synthesized by Thermal Chemical-Vapor Deposition

Crystals ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 517
Author(s):  
Seok Cheol Choi ◽  
Do Kyung Lee ◽  
Sang Ho Sohn
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Morphological Properties ◽  
Two Dimensional ◽  
Zno Nanostructures ◽  
Au Catalyst ◽  
Thermal Chemical Vapor Deposition ◽  
Si Substrates ◽  
Cvd Method

Using two experimental configurations, self-assembled zinc oxide (ZnO) nanostructures including nanoplates, nanosaws, and nanobelts were synthesized by thermal chemical-vapor deposition (CVD), and their morphological properties were investigated. ZnO nanostructures grown on Au-coated Si substrates in a parallel setup revealed highly defined ZnO nanoplates and branched nanowires. ZnO nanostructures grown in a perpendicular setup using Si substrates with and without the Au catalyst exhibited vertically oriented ZnO nanosaws and randomly aligned nanobelts, respectively. In the thermal CVD method, experiment conditions such as oxygen-flow rate, growth temperature, and catalyst, and experimental configurations (i.e., parallel and perpendicular setups) were important parameters to control the morphologies of two-dimensional ZnO nanostructures showing platelike, sawlike, and beltlike shapes.

Effect of Metal Catalyst Morphology on the Growth of Zinc Oxide Nanostructure by Thermal Vapor Deposition Method

2014 ◽  
Vol 925 ◽  
pp. 120-124 ◽  
Author(s):  
Aimi Bazilah Rosli ◽  
N.D.H.Abd Patah ◽  
Shafinaz Sobihana Shariffudin ◽  
S.H. Herman ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Metal Catalyst ◽  
Zno Nanostructures ◽  
Au Catalyst ◽  
Thermal Chemical Vapor Deposition ◽  
Material Component ◽  
Different Thickness

This paper reports on the effects of gold (Au) catalyst on the growth of zinc oxide (ZnO) nanostructures by thermal chemical vapor deposition (TCVD). The thickness of Au catalyst was varied from 5 to 15 nm. The Au catalyst was annealed at 500 °C prior to the deposition of ZnO nanostructures by thermal chemical vapor deposition (TCVD). The morphology of the Au catalyst at different thickness and also ZnO nanostructures were characterized by field emission scanning electron microscopy (FESEM). The material component and crystalline properties of ZnO nanostructures were determined using Energy Dispersive X-ray spectroscopy (EDX) and also Raman Spectroscopy respectively. We found that the shape of the deposited ZnO nanostructures were different on different thickness of Au catalyst. There was no growth of ZnO on the 5 nm thick Au observed by FESEM and supported by EDX due to very small amount of Zn. On the 10 and 15 nm thick Au, growth of ZnO nanostructures were clearly observed.

Low Temperature growth of poly-crystalline film of Silicon-rich Silicon-Germanium by Reactive Thermal Chemical Vapor Deposition

2000 ◽  
Vol 638 ◽  
Author(s):  
Kousaku Shimizu ◽  
Jianjun Zhang ◽  
Jeong-Woo Lee ◽  
Jun-Ichi Hanna
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Residence Time ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Thermal Chemical Vapor Deposition ◽  
Source Materials

AbstractLow temperature growth of poly-SiGe has been investigated by reactive thermal chemical vapor deposition method, which is a newly developed technique for preparing poly-SiGe by using redox reactions in a set of source materials, i.e., Si2H6 and GeF4. In order to prepare silicon-rich poly-SiGe of high mobility, a series of experiment on total pressure, gas flow rates of the source materials and dilution gas of He, and residence time at 450°C has been investigated.At 0.45 Torr, high crystallinity films with high silicon content were prepared, however, homogeneity of film thickness and reproducibility of the film growth was quite low for device application. For overcoming this problem, the growth condition has been studied especially in higher-pressure range of 5-15 Torr. Appropriate choice of the residence time and the gas flow ratios lead to significant improvement in the Si content in the films. Finally, more than 95% of silicon-rich poly-SiGe films, which is p-type, has 7.5 cm2/Vs of Hall mobility and (220) orientation, have been prepared at 10 Torr and 450°C within ±2% fluctuation of reproducibility which is enough to fabricate devices.

Modulating the shape of ZnO nanostructures grown by using thermal chemical-vapor deposition

2015 ◽  
Vol 67 (9) ◽  
pp. 1588-1591
Author(s):  
Jaesu Kim ◽  
Yong Hwan Kim ◽  
Hye Min Oh ◽  
Hyun Jeong ◽  
Seong Chu Lim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Zno Nanostructures ◽  
Thermal Chemical Vapor Deposition
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