Metallic seed layers for ion-beam assisted pulsed laser deposition of highly textured transition metal nitride films

2008 ◽  
Vol 41 (24) ◽  
pp. 245404 ◽  
Author(s):  
R Hühne ◽  
K Güth ◽  
M Kidszun ◽  
R Kaltofen ◽  
L Schultz ◽  
...  
Keyword(s):  
Transition Metal ◽  
Pulsed Laser Deposition ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Metal Nitride ◽  
Transition Metal Nitride ◽  
Seed Layers

Ion-beam assisted pulsed laser deposition of textured transition-metal nitride films

2008 ◽  
Vol 1150 ◽  
Author(s):  
Ruben Hühne ◽  
Martin Kidszun ◽  
Konrad Güth ◽  
Franziska Thoss ◽  
Bernd Rellinghaus ◽  
...  
Keyword(s):  
Transition Metal ◽  
Pulsed Laser Deposition ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Cube Texture ◽  
Coated Conductors ◽  
Laser Deposition ◽  
Transition Metal Nitrides ◽  
Metal Nitride ◽  
Transition Metal Nitride

AbstractIon-beam assisted deposition (IBAD) offers the possibility to prepare thin textured films on amorphous or non-textured substrates. It was shown within the last decade that the ion beam influences the nucleation in material with a rocksalt structure leading to a strong cube texture already within the first 10 nanometres. Among these materials, transition metal nitrides exhibit interesting physical properties as superconductivity, metallic behaviour or superior hardness. Therefore, a reactive IBAD process was applied for the preparation of highly textured transition metal nitride layers using pulsed laser deposition of pure metals in combination with a nitrogen-containing ion beam. The results on the in-plane textured growth of TiN are promising for the development of conducting buffer layer architectures for YBCO coated conductors based on the IBAD approach. Furthermore, this approach was used to prepare other highly textured transition metal nitride thin films like NbN and ZrN.

Transition metal oxide films prepared by pulsed laser deposition for atomic beam detection

1996 ◽  
Vol 281-282 ◽  
pp. 453-456 ◽  
Author(s):  
M. Tanaka ◽  
M. Mukai ◽  
Y. Fujimori ◽  
M. Kondoh ◽  
Y. Tasaka ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Pulsed Laser Deposition ◽  
Atomic Beam ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Transition Metal Oxide ◽  
Laser Deposition ◽  
Metal Oxide Films

Fabricating Two-Dimensional Metal Nanocrystal Arrays Using Pulsed-Laser Deposition and Focused Ion-Beam Technologies

2000 ◽  
Vol 636 ◽  
Author(s):  
Richard F. Haglund ◽  
Robert A. Weller ◽  
Cynthia E. Heiner ◽  
Matthew D. McMahon ◽  
Robert H. Magruder ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Silicon Surfaces ◽  
Silver Nanoclusters ◽  
Laser Evaporation ◽  
Si Substrates

AbstractWe describe recent experiments in which we attempted the initial steps for fabricating twodimensional arrays of metal nanocrystals. We use a commercial pulsed-laser deposition system in concert with a focused ion beam to attempt control over both lateral and vertical dimensions at the nanometer length scale. In our experiments, regular arrays of holes typically 80 nm in diameter were drilled in Si substrates using the focused ion beam. Silver atoms were then deposited onto these substrates by pulsed laser evaporation from a metallic target in high vacuum. Under certain conditions of substrate temperature, laser pulse repetition rate, and fluence, small silver nanoclusters form preferentially around the structures previously etched in the silicon surfaces by the focused ion beam.

Ion-beam luminescence of thin-film CdS on glass formed by pulsed-laser deposition

2005 ◽  
Vol 97 (2) ◽  
pp. 023512 ◽  
Author(s):  
M. Khanlary ◽  
P. Townsend ◽  
B. Ullrich ◽  
D. E. Hole
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Laser Deposition

Development of conducting buffer architectures using cube textured IBAD-TiN layers

2008 ◽  
Vol 1150 ◽  
Author(s):  
Ruben Hühne ◽  
Konrad Güth ◽  
Martin Kidszun ◽  
Rainer Kaltofen ◽  
Vladimir Matias ◽  
...  
Keyword(s):  
Ion Beam ◽  
Pulsed Laser ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Tin Films ◽  
Ion Beam Assisted Deposition ◽  
Conductive Oxide ◽  
Ybco Coated Conductors ◽  
Seed Layers

AbstractIon-beam assisted deposition (IBAD) offers the possibility to prepare thin textured films on amorphous or non-textured substrates. In particular, the textured nucleation of TiN is promising for the development of a conducting buffer layer architecture for YBCO coated conductors based on the IBAD approach. Accordingly, cube textured IBAD-TiN layers have been deposited reactively using pulsed laser deposition on Si/Si3N4 substrates as well as on polished Hastelloy tapes using different amorphous seed layers. Metallic buffer layers such as Au, Pt or Ir were grown epitaxially on top of the TiN layer showing texture values similar to the IBAD layer. Smooth layers were obtained using a double layer of Au/Pt or Au/Ir. Biaxially textured YBCO layers were achieved using SrRuO3 or Nb-doped SrTiO3 as a conductive oxide cap layer. Finally, different amorphous conducting seed layers were applied for the IBAD-TiN process. Highly textured TiN films were achieved on amorphous Ta0.75Ni0.25 layers showing a similar in-plane orientation of about 8° as on standard seed layers.

Carbon Nitride Thin Films Grown by Pulsed Laser Deposition

1993 ◽  
Vol 327 ◽  
Author(s):  
Randolph E. Treece ◽  
James S. Horwitz ◽  
Douglas B. Chrisey
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Deposition Parameters ◽  
Wide Range ◽  
Gas Atmosphere

AbstractThin films of diamond and diamond-like carbon (DLC) are technologically important materials that serve as hard, scratch resistant and chemically inert coatings for tools and optics. Recent calculations suggest that β-C3N4 should be harder than diamond. We have deposited carbon nitride (CNx) thin films by pulsed laser deposition. The films were grown from a graphite target in a nitrogen background. The nitrogen source was either (a) a N2 gas atmosphere, or (b) a N2+/N+ ion beam generated by a Kaufman ion gun. A wide range of deposition parameters were investigated, such as deposition pressure (0.3-900 mTorr N2), substrate temperature (50 and 600°C), and laser fluence (1-4 J/cm2) and laser repetition rate (1-10 Hz). The films have been characterized by Rutherford Backscattering Spectroscopy, thin-film X-ray diffraction, scanning electron microscopy, and micro-Raman spectroscopy. In general, the films were nitrogen deficient with a maximum nitrogen to carbon ratio (N/C) of 0.45 and a shift in the G band Raman peak consistent with amorphous CNx (a-CNx).

Plasma interactions in ion beam assisted pulsed laser deposition of Al-O-N films

2008 ◽  
Vol 103 (2) ◽  
pp. 024902 ◽  
Author(s):  
A. A. Voevodin ◽  
J. G. Jones ◽  
J. S. Zabinski ◽  
A. R. Waite
Keyword(s):  
Pulsed Laser Deposition ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Plasma Interactions
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