scholarly journals Observation of the shock wave propagation induced by a high-power laser irradiation into an epoxy material

2013 ◽  
Vol 46 (23) ◽  
pp. 235501 ◽  
Author(s):  
Romain Ecault ◽  
Laurent Berthe ◽  
Michel Boustie ◽  
Fabienne Touchard ◽  
Emilien Lescoute ◽  
...  
2021 ◽  
Author(s):  
Yu Takiguchi ◽  
Hiroshi Tanaka ◽  
Tsubasa Watanabe ◽  
Yoshiyuki Ohtake ◽  
Haruyoshi Toyoda

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Maria Chernysheva ◽  
Mohammed Al Araimi ◽  
Graham A. Rance ◽  
Nicola J. Weston ◽  
Baogui Shi ◽  
...  

2015 ◽  
Author(s):  
Yong Wu ◽  
Lei Zhang ◽  
Pengling Yang ◽  
Zhenbao Wang ◽  
Mengmeng Tao ◽  
...  

2018 ◽  
Vol 48 (6) ◽  
pp. 516-520
Author(s):  
N N Il'ichev ◽  
A V Sidorin ◽  
E S Gulyamova ◽  
P P Pashinin

2006 ◽  
Vol 527-529 ◽  
pp. 375-378 ◽  
Author(s):  
Toshiyuki Miyanagi ◽  
Hidekazu Tsuchida ◽  
Isaho Kamata ◽  
Tomonori Nakamura ◽  
R. Ishii ◽  
...  

We provide evidence of shrinking of Shockley-type stacking faults (SSFs) in the SiC epitaxial layer by high temperature annealing. Photoluminescence (PL) mapping in combination with high-power laser irradiation makes it possible to investigate the formation of SSFs, which lie between a pair of partial dislocations formed by dissociation of a basal plane dislocation (BPD), without fabrication of pin diodes. Using this technique, we investigated the annealing effect on SSFs. Comparing before and after annealing at 600°C for 10 min, it became obvious that high-temperature annealing results in shrinking of the faulted area of the SSFs. The SSFs form into the same features as those before annealing when high-power laser irradiation is performed again on the same area. This result shows that the faulted area of SSFs shrinks by 600°C annealing but the nuclei of SSFs (BPDs) do not disappear.


2017 ◽  
Vol 131 ◽  
pp. 342-347
Author(s):  
T. Shibuya ◽  
N. Hayashizaki ◽  
D. Satoh ◽  
M. Yoshida

Optik ◽  
2019 ◽  
Vol 194 ◽  
pp. 163053
Author(s):  
Yi Chen ◽  
Sensen Li ◽  
Xiangyu Qu ◽  
Pengyuan Du ◽  
Lei Ding ◽  
...  

2017 ◽  
Vol 44 (5) ◽  
pp. 0504003
Author(s):  
公维超 Gong Weichao ◽  
郑也 Zheng Ye ◽  
杨依枫 Yang Yifeng ◽  
何兵 He Bing ◽  
周军 Zhou Jun

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