Manipulation of Nanoparticles Using Dark-Field-Illumination Optical Tweezers with Compensating Spherical Aberration

2009 ◽  
Vol 26 (6) ◽  
pp. 068701 ◽  
Author(s):  
Zhou Jin-Hua ◽  
Tao Run-Zhe ◽  
Hu Zhi-Bin ◽  
Zhong Min-Cheng ◽  
Wang Zi-Qiang ◽  
...  
Author(s):  
M. G. R. Thomson

The variation of contrast and signal to noise ratio with change in detector solid angle in the high resolution scanning transmission electron microscope was discussed in an earlier paper. In that paper the conclusions were that the most favourable conditions for the imaging of isolated single heavy atoms were, using the notation in figure 1, either bright field phase contrast with β0⋍0.5 α0, or dark field with an annular detector subtending an angle between ao and effectively π/2.The microscope is represented simply by the model illustrated in figure 1, and the objective lens is characterised by its coefficient of spherical aberration Cs. All the results for the Scanning Transmission Electron Microscope (STEM) may with care be applied to the Conventional Electron Microscope (CEM). The object atom is represented as detailed in reference 2, except that ϕ(θ) is taken to be the constant ϕ(0) to simplify the integration. This is reasonable for θ ≤ 0.1 θ0, where 60 is the screening angle.


Author(s):  
Earl J. Kirkland ◽  
Robert J. Keyse

An ultra-high resolution pole piece with a coefficient of spherical aberration Cs=0.7mm. was previously designed for a Vacuum Generators HB-501A Scanning Transmission Electron Microscope (STEM). This lens was used to produce bright field (BF) and annular dark field (ADF) images of (111) silicon with a lattice spacing of 1.92 Å. In this microscope the specimen must be loaded into the lens through the top bore (or exit bore, electrons traveling from the bottom to the top). Thus the top bore must be rather large to accommodate the specimen holder. Unfortunately, a large bore is not ideal for producing low aberrations. The old lens was thus highly asymmetrical, with an upper bore of 8.0mm. Even with this large upper bore it has not been possible to produce a tilting stage, which hampers high resolution microscopy.


Author(s):  
H.S. von Harrach ◽  
D.E. Jesson ◽  
S.J. Pennycook

Phase contrast TEM has been the leading technique for high resolution imaging of materials for many years, whilst STEM has been the principal method for high-resolution microanalysis. However, it was demonstrated many years ago that low angle dark-field STEM imaging is a priori capable of almost 50% higher point resolution than coherent bright-field imaging (i.e. phase contrast TEM or STEM). This advantage was not exploited until Pennycook developed the high-angle annular dark-field (ADF) technique which can provide an incoherent image showing both high image resolution and atomic number contrast.This paper describes the design and first results of a 300kV field-emission STEM (VG Microscopes HB603U) which has improved ADF STEM image resolution towards the 1 angstrom target. The instrument uses a cold field-emission gun, generating a 300 kV beam of up to 1 μA from an 11-stage accelerator. The beam is focussed on to the specimen by two condensers and a condenser-objective lens with a spherical aberration coefficient of 1.0 mm.


2020 ◽  
Vol 64 (3) ◽  
Author(s):  
Eva Jennische ◽  
Stefan Lange ◽  
Ragnar Hultborn

A simple dark field microscopy technique was used for visualization of blood vessels in normal human renal tissues and carcinoma. Phase contrast condenser ring apt for high power objectives was combined with a 10x objective in order to create a dark field illumination of the specimens examined. The endothelial lining of the vessels had been stained by using CD31 monoclonal antibodies combined with conventional peroxidase immunohistochemistry. The final DAB addition used for this technique induced an intense light scatter in the dark field microscope. This scattered light originating from the endothelial lining made the walls of the bright vessels easily detectable from the dark background.


2004 ◽  
Vol 236 (1-3) ◽  
pp. 145-150 ◽  
Author(s):  
Eirini Theofanidou ◽  
Laurence Wilson ◽  
William J. Hossack ◽  
Jochen Arlt

1999 ◽  
Vol 5 (S2) ◽  
pp. 670-671 ◽  
Author(s):  
O.L. Krivanek ◽  
N. Dellby ◽  
A.R. Lupini

Even though two generations of electron microscopists have come to accept that the resolution of their instruments is limited by spherical aberration, three different aberration correctors showing that the aberration can be overcome have recently been built [1-3]. One of these correctors was developed by us specifically for forming small electron probes in a dedicated scanning transmission electron microscope (STEM) [3, 4]. It promises to revolutionize the way STEM instruments are built and the types of problems that they are applied to.As was the case with the Berlin Wall, when a barrier that was once thought immovable finally crumbles, many of the consequences can be quite unexpected. For STEM, the removal of spherical aberration (Cs) as the main resolution limit is likely to lead to a new paradigm in which:1) The resolution at a given operating voltage will improve by about 3x relative to today's best. When Cs can be adjusted arbitrarily in a STEM being used for microanalysis or dark field imaging, defocus and Cs are set to values that optimally oppose the effect of the 5th-order spherical aberration C5.


2001 ◽  
Vol 7 (S2) ◽  
pp. 906-907
Author(s):  
L. F. Allard ◽  
E. Voelkl ◽  
D. A. Blom ◽  
T. A. Nolan ◽  
F. Kahl ◽  
...  

Field emission electron microscopes operating at 200kV or 300kV and incorporating aberration correctors for either the incident electron probe or for the primary aberrations of the objective lens (OL) are currently under development for several laboratories in the world. OL-corrected instruments require monochromators for the electron beam, built into the electron gun prior to the accelerating stages, in order to optimize the contrast transfer characteristics of the objective lens to push the instrumental resolution limit to well beyond 0.1nm. This will allow the point resolution limit as controlled by the correction of spherical aberration Cs to potentially extend to the instrumental limit of better than 0.1nm. Figure 1 shows the contrast transfer characteristics of a Cs-corrected 200kV TEM, both without and with a beam monochromator.Dedicated STEM instruments such as the 300kV VG-603 and lOOkV VG-501 at Oak Ridge National Laboratory, and other VG instruments at Cornell University and IBM Co. are also being adapted (by Nion Co., Kirkland, WA) to incorporate aberration correctors for the incident probe. The aim is to improve the resolution of the VG-603 instrument in dark-field imaging mode, for example, from 0.13nm to 0.05nm. in another ORNL project, the High Temperature Materials Laboratory has contracted JEOL Ltd. to construct a STEM-TEM instrument with a probe corrector designed and built by CEOS GmbH (Heidelberg, Germany).


Sign in / Sign up

Export Citation Format

Share Document