A comparative electron paramagnetic resonance study of vanadium in n-type, semi-insulating and p-type CdTe

1995 ◽  
Vol 10 (2) ◽  
pp. 163-166 ◽  
Author(s):  
H J von Bardeleben ◽  
V Mazoyer ◽  
X Launay ◽  
J C Launay
2007 ◽  
Vol 556-557 ◽  
pp. 453-456 ◽  
Author(s):  
T. Umeda ◽  
Norio Morishita ◽  
Takeshi Ohshima ◽  
Hisayoshi Itoh ◽  
Junichi Isoya

Carbon antisite-vacancy pair (CSiVC) is a fundamental defect in SiC, and is theoretically predicted to be very stable in p-type materials. However, this pair was found only in the form of a negatively charged state (i.e., the SI5 center = CSiVC −) in n-type and semi-insulating 4H-SiC, and yet, its presence has not been shown in p-type SiC. In this report, we present the first EPR observation on positively charged CSiVC pairs in p-type 4H-SiC. By carefully examining p-type samples after electron irradiation, we found a pair of new defects with C3v and C1h symmetries. They correspond to “c-axial” pairs (C3v) and “basal” pairs (C1h) of CSiVC +, respectively. The positively charged pairs are characterized by a strong 13C hyperfine interaction due to a dangling bond on a carbon antisite (CSi), which is successfully resolved for the c-axial pairs.


2014 ◽  
Vol 2 (38) ◽  
pp. 8105-8112 ◽  
Author(s):  
Francesco Tampieri ◽  
Simone Silvestrini ◽  
Raffaele Riccò ◽  
Michele Maggini ◽  
Antonio Barbon

EPR techniques enable the disentangling of signals belonging to different types of structures.


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