Thermal expansion of a boron-doped diamond single crystal at low temperatures

1998 ◽  
Vol 10 (6) ◽  
pp. 1267-1272 ◽  
Author(s):  
Takao Saotome ◽  
Kazutoshi Ohashi ◽  
Toshimaro Sato ◽  
Hiroshi Maeta ◽  
Katsuji Haruna ◽  
...  
2008 ◽  
Vol 25 (7) ◽  
pp. 2667-2669 ◽  
Author(s):  
Zhang He-Min ◽  
Zang Chuan-Yi ◽  
Li Xiao-Lei ◽  
Ma Hong-An ◽  
Li Shang-Sheng ◽  
...  

1992 ◽  
Vol 31 (Part 1, No. 8) ◽  
pp. 2527-2529 ◽  
Author(s):  
Katsuji Haruna ◽  
Hiroshi Maeta ◽  
Kazutoshi Ohashi ◽  
Takuro Koike

2002 ◽  
Vol 65 (9) ◽  
Author(s):  
Toshimaro Sato ◽  
Kazutoshi Ohashi ◽  
Tomoko Sudoh ◽  
Katsuji Haruna ◽  
Hiroshi Maeta

2021 ◽  
Vol 93 (14) ◽  
pp. 5831-5838
Author(s):  
Tomohiro Ando ◽  
Kai Asai ◽  
Julie Macpherson ◽  
Yasuaki Einaga ◽  
Takeshi Fukuma ◽  
...  

2011 ◽  
Vol 1282 ◽  
Author(s):  
Tomas L. Martin ◽  
Kane M. O’Donnell ◽  
Hidetsugu Shiozawa ◽  
Cristina E. Giusca ◽  
Neil A. Fox ◽  
...  

ABSTRACTThin lithium layers on oxygenated C(100) boron-doped diamond have been observed using x-ray photoemission spectroscopy. Conductive boron-doped diamond was oxygen-terminated using an ozone cleaner. Lithium was evaporated onto the oxygen-terminated C(100) surface and an as-grown hydrogen terminated surface to a thickness of approximately 50 nm. After washing with deionised water, significant lithium signal is still detected on oxygenated diamond, but not on hydrogenated diamond, indicating a strongly bound lithium-oxygen surface layer is formed, as predicted by recent theoretical modeling.


2009 ◽  
Vol 1203 ◽  
Author(s):  
Timothy Grotjohn ◽  
Shannon Nicley ◽  
Dzung Tran ◽  
Donnie K. Reinhard ◽  
Michael Becker ◽  
...  

AbstractThe electrical characteristics of high quality single crystal boron-doped diamond are studied. Samples are synthesized in a high power-density microwave plasma-assisted chemical vapor deposition (CVD) reactor at pressures of 130-160 Torr. The boron-doped diamond films are grown using diborane in the feedgas at concentrations of 1 to 50 ppm. The boron acceptor concentration is investigated using infrared absorption and a four point probe is used to study the conductivity. The temperature dependent conductivity is analyzed to determine the boron dopant activation energy.


2009 ◽  
Vol 18 (5-8) ◽  
pp. 816-819 ◽  
Author(s):  
C. Pietzka ◽  
A. Denisenko ◽  
L.A. Kibler ◽  
J. Scharpf ◽  
Y. Men ◽  
...  

2016 ◽  
Vol 28 (10) ◽  
pp. 2297-2302 ◽  
Author(s):  
Lucy I. Tomlinson ◽  
Hollie V. Patten ◽  
Ben L. Green ◽  
James Iacobini ◽  
Katherine E. Meadows ◽  
...  

2002 ◽  
Vol 149 (6) ◽  
pp. E179 ◽  
Author(s):  
Takeshi Kondo ◽  
Yasuaki Einaga ◽  
Bulusu V. Sarada ◽  
Tata N. Rao ◽  
Donald A. Tryk ◽  
...  

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