Single Crystal Boron-Doped Diamond Synthesis

2009 ◽  
Vol 1203 ◽  
Author(s):  
Timothy Grotjohn ◽  
Shannon Nicley ◽  
Dzung Tran ◽  
Donnie K. Reinhard ◽  
Michael Becker ◽  
...  
Keyword(s):  
Single Crystal ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Electrical Characteristics ◽  
Temperature Dependent ◽  
Boron Doped Diamond ◽  
Dopant Activation ◽  
Boron Doped ◽  
Boron Dopant ◽  
Boron Acceptor

AbstractThe electrical characteristics of high quality single crystal boron-doped diamond are studied. Samples are synthesized in a high power-density microwave plasma-assisted chemical vapor deposition (CVD) reactor at pressures of 130-160 Torr. The boron-doped diamond films are grown using diborane in the feedgas at concentrations of 1 to 50 ppm. The boron acceptor concentration is investigated using infrared absorption and a four point probe is used to study the conductivity. The temperature dependent conductivity is analyzed to determine the boron dopant activation energy.

Determination of Boron Concentration in Doped Diamond Films

2011 ◽  
Vol 1282 ◽  
Author(s):  
S.N. Demlow ◽  
T.A. Grotjohn ◽  
T. Hogan ◽  
M. Becker ◽  
J. Asmussen
Keyword(s):  
Boron Concentration ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Boron Doped Diamond ◽  
Dopant Activation ◽  
Boron Doped ◽  
Boron Dopant ◽  
Boron Acceptor

ABSTRACTThe electrical characteristics of high quality single crystal boron-doped diamond are studied. Samples are synthesized in a high power-density microwave plasma-assisted chemical vapor deposition (CVD) reactor at a pressure of 160 Torr. The boron-doped diamond films are grown using diborane in the feedgas at concentrations of 0-0.25 ppm, and are compared to those grown previously with 1-10 ppm. The boron acceptor concentration is investigated using infrared absorption, and compared to the boron concentration obtained by SIMS. A four point probe is used to study the conductivity. The temperature dependent conductivity is analyzed to determine the boron dopant activation energy.

Investigating point defects in irradiated boron-doped diamond films by temperature-dependent electrical properties and scanning tunneling microscopy and spectroscopy

2010 ◽  
Vol 25 (3) ◽  
pp. 444-457 ◽  
Author(s):  
Sanju Gupta ◽  
John Farmer ◽  
Dario Daghero ◽  
Renato Gonnelli
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Point Defects ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Temperature Dependent ◽  
Boron Doped Diamond ◽  
Boron Doped

We report temperature-dependent electrical resistivity (or dc conductivity, σdc) down to 4 K for pristine and gamma-irradiated microwave plasma-assisted chemical vapor-deposited boron-doped diamond films with [B]/[C]gas = 4000 ppm to gain insights into the nature of conduction mechanism, distribution, and kinetics of point defects generated due to gamma irradiation prompted by the article [Gupta et al., J. Mater. Res.24, 1498 (2009)]. The pristine samples exhibit typical metallic conduction up to 50 K and with reduction in temperature to 25 K, the σdc decreases monotonically followed by saturation at 4 K, suggesting “disordered” metal or “localized” behavior. For irradiated films, continuous increasing resistivity with decreasing temperature demonstrates semiconducting behavior with thermal activation/hopping conduction phenomena. It is intriguing to propose that irradiation leads to substantial hydrogen redistribution leading to unexpected low-temperature resistivity behavior. Scanning tunneling microscopy/spectroscopy helped to illustrate local grain and grain boundary effects.

Electrochemical Oxidation of Phenol in Water Solutions Using Nanocrystalline Boron-Doped Diamond Film Anode

2012 ◽  
Vol 1395 ◽  
Author(s):  
Jorge Arturo Lara Viera ◽  
Manoj K. Ram ◽  
Pedro Villalba ◽  
Mikhail Ladanov ◽  
Ashok Kumar
Keyword(s):  
Electrochemical Oxidation ◽  
Diamond Film ◽  
Microwave Plasma ◽  
Water Solution ◽  
Chemical Vapor ◽  
Test Sample ◽  
Sample Solution ◽  
Boron Doped Diamond ◽  
Plasma Chemical Vapor Deposition ◽  
Boron Doped

ABSTRACTThe present paper reports the utilization of a boron-doped nanocrystalline diamond film (BDD) in electrochemical oxidization (ECO) process of organic phenol compound in 0.1 M H2SO4 water solution. The nano BDD films were synthesized by microwave plasma chemical vapor deposition (MWPCVD), and then characterized by Raman spectroscopy and SEM before and after the electrochemical oxidation treatment. For the ECO treatment performed to the test sample solution, an observation of the first and the last voltammetric plots exhibited a qualitatively differences between the two plots where the first one represent the initial concentration and the last one the signal produced by the organic solution after treatment. UV-Vis analysis through the application of a standard calibration curve, quantitatively confirmed the composition of phenol remaining in the sample solution subdued to the ECO treatment.

Characteristics of deposited boron doping diamond on tungsten carbide insert by MPECVD

2015 ◽  
Vol 29 (06n07) ◽  
pp. 1540048
Author(s):  
Jong Seok Kim ◽  
Yeong Min Park ◽  
Jeong Wan Kim ◽  
Kelimu Tulugan ◽  
Tae Gyu Kim
Keyword(s):  
Tungsten Carbide ◽  
Tool Life ◽  
Microwave Plasma ◽  
Copper Alloys ◽  
Cutting Tools ◽  
Chemical Vapor ◽  
Fiber Reinforced Polymers ◽  
Boron Doped Diamond ◽  
Silicon Alloys ◽  
Boron Doped

Diamond-coated cutting tools are used primarily for machining non-ferrous materials such as aluminum–silicon alloys, copper alloys, fiber-reinforced polymers, green ceramics and graphite. Because the tool life of cemented carbide cutting tool is greatly improved by diamond coating, and typically more than 10 times of the tool life is obtained. However, research of boron-doped diamond (BDD) coating tool has not been fully researched yet. In this study, we have succeeded to make boron-doped microcrystalline and nanocrystalline diamond-coated Co -cemented tungsten carbide (WC– Co ) inserts. Microcrystalline BDD thin film is deposited on WC– Co insert by using microwave plasma enhanced chemical vapor deposition (MPECVD) method. Scanning electron microscope (SEM) and Raman spectroscopy are used to characterize the as-deposited diamond films.1,2

scholarly journals Synthesis and Characterization of Boron-Doped Single Crystal Diamond

2013 ◽  
Vol 1519 ◽  
Author(s):  
Sunil K. Karna ◽  
D. V. Martyshkin ◽  
Yogesh K. Vohra ◽  
Samuel T. Weir
Keyword(s):  
Single Crystal ◽  
Optical Phonon ◽  
Boron Content ◽  
Phonon Mode ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Electrical Measurement ◽  
Optical Phonon Mode ◽  
Boron Doped ◽  
Single Crystal Diamond

ABSTRACTThe boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100) oriented Type Ib diamond substrates using a Microwave Plasma Chemical Vapor Deposition (MPCVD) technique. Raman spectrum showed a few additional bands at the lower wavenumber regions along with the zone center optical phonon mode for diamond. The change in the peak profile of the zone center optical phonon mode and its downshift were observed with the increasing boron content in the film. A modification in surface morphology of the film with increasing boron content had been observed by atomic force microscopy. Four point probe electrical measurement indicated that different conduction mechanisms are operating in various temperature regions for these semiconducting films.

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