Annealing of radiation induced oxygen deficient point defects in amorphous silicon dioxide: evidence for a distribution of the reaction activation energies

2008 ◽  
Vol 20 (38) ◽  
pp. 385215 ◽  
Author(s):  
L Nuccio ◽  
S Agnello ◽  
R Boscaino
Author(s):  
И.П. Щербаков ◽  
А.Е. Чмель

AbstractThe introduction of Si^+ ions and ions of other elements into amorphous silicon dioxide during their interaction causes damage to the structural bonds, which is observed in the vibrational spectral bands. Pure SiO_2 has no optical transitions but the bands of induced point defects appear in the photoluminescence spectrum when ions/neutrons are introduced. The generation of photoluminescence-active defects by fluxes of Ar^+ ion and thermal neutrons is compared. It is shown that the nature of damage to the structure is associated with both the specifics of the synthesis/processing of the material and the features of the interaction between the substance and ions (atomic collisions) and neutrons (collisions with atomic nuclei).


2001 ◽  
Vol 86 (9) ◽  
pp. 1777-1780 ◽  
Author(s):  
Takashi Uchino ◽  
Masahide Takahashi ◽  
Toshinobu Yoko

1992 ◽  
Vol 139 (3) ◽  
pp. 872-880 ◽  
Author(s):  
W. L. Warren ◽  
E. H. Poindexter ◽  
M. Offenberg ◽  
W. Müller‐Warmuth

Sign in / Sign up

Export Citation Format

Share Document