Optical emission spectra of TEOS and HMDSO derived plasmas used for thin film deposition

2003 ◽  
Vol 12 (1) ◽  
pp. 89-96 ◽  
Author(s):  
A Granier ◽  
M Vervloet ◽  
K Aumaille ◽  
C Vall e
Keyword(s):  
Thin Film ◽  
Emission Spectra ◽  
Optical Emission ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Optical Emission Spectra

Emission spectra study of plasma enhanced chemical vapor deposition of intrinsic, n+, and p+ amorphous silicon thin films

2013 ◽  
Vol 1536 ◽  
pp. 133-138
Author(s):  
I-Syuan Lee ◽  
Yue Kuo
Keyword(s):  
Deposition Rate ◽  
Gas Flow ◽  
Emission Spectra ◽  
Chemical Vapor ◽  
Critical Factor ◽  
Optical Emission ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Silicon Thin Films ◽  
Deposition Processes

ABSTRACTThe PECVD intrinsic, n+, and p+ a-Si:H thin film deposition processes have been studied by the optical emission spectroscope to monitor the plasma phase chemistry. Process parameters, such as the plasma power, pressure, and gas flow rate, were correlated to SiH*, Hα*, and Hβ* optical intensities. For all films, the deposition rate increases with the increase of the SiH* intensity. For the doped films, the Hα*/SiH* ratio is a critical factor affecting the resistivity. The existence of PH3 or B2H6 in the feed stream enhances the deposition rate. Changes of the free radicals intensities can be used to explain variation of film characteristics under different deposition conditions.

Optimization of a Dual-Mode RF / Microwave Plasma for Amorphous thin film Deposition

1994 ◽  
Vol 336 ◽  
Author(s):  
R. Etemadi ◽  
O. Leroy ◽  
B. Drevillon ◽  
C. Godet
Keyword(s):  
Thin Film ◽  
Microwave Plasma ◽  
Plasma Deposition ◽  
Plasma Chemistry ◽  
High Growth ◽  
Optical Emission ◽  
Thin Film Deposition ◽  
High Growth Rate ◽  
Film Deposition ◽  
Dual Mode

ABSTRACTA new dual-plasma (surface wave-coupled microwave and capacitively-coupled radiofrequency) PECVD reactor for high growth rate of Amorphous insulating alloys is being developped. A high flexibility for thin film materials synthesis is expected, because the energy of the ion bombardment can be monitored independently from the microwave plasma chemistry. In situ diagnostics (Optical EMission Spectroscopy and Spectroscopie Ellipsometry) are used for the optimization of the dual-Mode plasma deposition of hydrogenated Amorphous silicon a-Si:H and silicon oxides a-SiOx:H (with 0 ≤ × ≤ 2). The growth of stoichiometric oxide at 3.3 nm / s has been achieved.

INVESTIGATION ON OPTICAL EMISSION SPECTRA DURING ECR PLASMA ENHANCED MAGNETRON SPUTTERING CARBON NITRIDE FILM DEPOSITION

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1120-1126 ◽  
Author(s):  
Jun Xu ◽  
Tengcai Ma ◽  
Jialiang Zhang ◽  
Xinlu Deng ◽  
Wenfang Zhang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Emission Spectra ◽  
Optical Emission ◽  
Film Deposition ◽  
Discharge Zone ◽  
Nitride Film ◽  
Plasma Zone ◽  
Ecr Plasma ◽  
Optical Emission Spectra ◽  
Cn Radicals

Emission spectra from the ECR plasma enhanced magnetron sputtering discharge used for CNx film deposition were investigated in the wavelength range 350 – 550 nm. The optical emission spectra from both the negative glow discharge zone near the target surface and the plasma zone formed by ECR discharge and magnetron discharge were studied separately. The dominant chemical species in both zone were found to be N2+, N2* , and CN radicals. But the intensity of CN radical in the plasma zone was greater than that in the negative zone, where an emission band of C2 was detected. The dependence of the intensities of CN band on the working gas pressure was investigated, and the formation of CN radicals, which could be vital in the CNx film deposition process, was discussed. It was shown that a possible mechanism could be the reaction of N2+ and N 2 with C 2 in the gas phase.

Plasma dynamics inferred from optical emission spectra, during diamond-like thin film pulsed laser deposition

1999 ◽  
Vol 8 (7) ◽  
pp. 1277-1284 ◽  
Author(s):  
R. Diamant ◽  
E. Jimenez ◽  
E. Haro-Poniatowski ◽  
L. Ponce ◽  
M. Fernandez-Guasti ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Emission Spectra ◽  
Optical Emission ◽  
Laser Deposition ◽  
Plasma Dynamics ◽  
Optical Emission Spectra

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

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