A multi-level memristor based on atomic layer deposition of iron oxide

2018 ◽  
Vol 29 (49) ◽  
pp. 495201 ◽  
Author(s):  
Samuele Porro ◽  
Katarzyna Bejtka ◽  
Alladin Jasmin ◽  
Marco Fontana ◽  
Gianluca Milano ◽  
...  
2018 ◽  
Vol 5 (14) ◽  
pp. 1800360 ◽  
Author(s):  
Katrin Kraffert ◽  
Matthias Karg ◽  
Roman Schmack ◽  
Guylhaine Clavel ◽  
Cedric Boissiere ◽  
...  

Author(s):  
Joel Schneider ◽  
Jon Baker ◽  
Stacey Bent

This work demonstrates a mechanistic study of iron oxide deposited by ALD, revealing a growth mechanism involving uptake of superstoichiometric oxygen. Material characterization shows ozone exposure can be used to convert the crystallographic phase and domain orientation of the materials. This mechanism has implications for wider classes of ozone-based ALD processes and can generalize to other systems.<br>


RSC Advances ◽  
2016 ◽  
Vol 6 (29) ◽  
pp. 24340-24348 ◽  
Author(s):  
Sai Abhishek Palaparty ◽  
Rajankumar L. Patel ◽  
Xinhua Liang

Optimally thick and conformal iron oxide (FeOx) ultrathin films coated on SnO2 nanoparticles by atomic layer deposition significantly improve the cycle life and capacity retention when operated in a practical voltage window at high current densities.


2011 ◽  
Vol 23 (8) ◽  
pp. 2030-2038 ◽  
Author(s):  
Jonathan R. Scheffe ◽  
Mark D. Allendorf ◽  
Eric N. Coker ◽  
Benjamin W. Jacobs ◽  
Anthony H. McDaniel ◽  
...  

2016 ◽  
Vol 611 ◽  
pp. 78-87 ◽  
Author(s):  
Manjunath Puttaswamy ◽  
Marko Vehkamäki ◽  
Kaupo Kukli ◽  
Mukesh Chandra Dimri ◽  
Marianna Kemell ◽  
...  

Langmuir ◽  
2011 ◽  
Vol 27 (1) ◽  
pp. 461-468 ◽  
Author(s):  
Benjamin M. Klahr ◽  
Alex B. F. Martinson ◽  
Thomas W. Hamann

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