Comparison of Magnesium and Titanium Doping on Material Properties and pH Sensing Performance on Sb2O3 Membranes in Electrolyte-Insulator-Semiconductor Structure

In this research, electrolyte-insulator-semiconductor (EIS) capacitors with Sb2O3 sensing membranes were fabricated. The results indicate that Mg doping and Ti-doped Sb2O3 membranes with appropriate annealing had improved material quality and sensing performance. Multiple material characterizations and sensing measurements of Mg-doped and Ti doping on Sb2O3 sensing membranes were conducted, including of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). These detailed studies indicate that silicate and defects in the membrane could be suppressed by doping and annealing. Moreover, compactness enhancement, crystallization and grainization, which reinforced the surface sites on the membrane and boosted the sensing factor, could be achieved by doping and annealing. Among all of the samples, Mg doped membrane with annealing at 400 °C had the most preferable material properties and sensing behaviors. Mg-doped Sb2O3-based with appropriate annealing are promising for future industrial ionsensing devices and for possible integration with Sb2O3-based semiconductor devices.

Multiferroic, Phonon and Optical Properties of Pure and Ion-Doped YFeO3 Nanoparticles

The magnetic, electric, phonon and optical properties of pure and ion-doped orthorhombic YFeO3 nanoparticles are studied for the first time theoretically. The spontaneous magnetization Ms in YFeO3 decreases with decreasing particle size. Ms is also shape dependent. The magnetization increases by Co and Er ion doping and decreases by Ti doping, which is caused by the different strain which appears in the nanoparticles and changes the exchange interaction constants in the doped states. The phonon energy for the Ag mode ω = 149 cm−1 and their damping decreases or increases with increasing temperature, respectively. Both show a kink near the Neel temperature, TN, which disappears by applying an external magnetic field. The influence of different ion doping on the band gap energy is also discussed. The doping effects can be used for different applications.