Photodiode Behaviors of the AgSbS2 Nanocrystals in a Schottky structure

2021 ◽  
Author(s):  
Adem Kocyigit ◽  
Mehmet Okan Erdal ◽  
Faruk Ozel ◽  
MURAT YILDIRIM
Keyword(s):  
Schottky Structure

Study on characteristics of schottky temperature detector based on metal/n-ZnO/n-Si structures

2020 ◽  
Vol 12 ◽  
Author(s):  
Fang Wang ◽  
Jingkai Wei ◽  
Caixia Guo ◽  
Tao Ma ◽  
Linqing Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Measurement ◽  
Temperature Response ◽  
Large Temperature ◽  
Mems Devices ◽  
Temperature Range ◽  
Response Characteristics ◽  
High Temperature Measurement ◽  
Temperature Detector ◽  
Schottky Structure

Background: At present, the main problems of Micro-Electro-Mechanical Systems (MEMS) temperature detector focus on the narrow range of temperature detection, difficulty of the high temperature measurement. Besides, MEMS devices have different response characteristics for various surrounding temperature in the petrochemical and metallurgy application fields with high-temperature and harsh conditions. To evaluate the performance stability of the hightemperature MEMS devices, the real-time temperature measurement is necessary. Objective: A schottky temperature detector based on the metal/n-ZnO/n-Si structures is designed to measure high temperature (523~873K) for the high-temperature MEMS devices with large temperature range. Method: By using the finite element method (FEM), three different work function metals (Cu, Ni and Pt) contact with the n-ZnO are investigated to realize Schottky. At room temperature (298K) and high temperature (523~873K), the current densities with various bias voltages (J-V) are studied. Results: The simulation results show that the high temperature response power consumption of three schottky detectors of Cu, Ni and Pt decreases successively, which are 1.16 mW, 63.63 μW and 0.14 μW. The response temperature sensitivities of 6.35 μA/K, 0.78 μA/K, and 2.29 nA/K are achieved. Conclusion: The Cu/n-ZnO/n-Si schottky structure could be used as a high temperature detector (523~873K) for the hightemperature MEMS devices. It has a large temperature range (350K) and a high response sensitivity is 6.35 μA/K. Compared with traditional devices, the Cu/n-ZnO/n-Si Schottky structure based temperature detector has a low energy consumption of 1.16 mW, which has potential applications in the high-temperature measurement of the MEMS devices.

Illumination dependence of I–V and C–V characterization of Au/InSb/InP(100) Schottky structure

2006 ◽  
Vol 253 (3) ◽  
pp. 1065-1070 ◽  
Author(s):  
B. Akkal ◽  
Z. Benamara ◽  
N. Bachir Bouiadjra ◽  
S. Tizi ◽  
B. Gruzza
Keyword(s):  
Schottky Structure

scholarly journals Enhancing performance of Ag–ZnO–Ag UV photodetector by piezo-phototronic effect

RSC Advances ◽  
2018 ◽  
Vol 8 (28) ◽  
pp. 15290-15296 ◽  
Author(s):  
Xiaotong Zhang ◽  
Yu Qiu ◽  
Dechao Yang ◽  
Bing Li ◽  
Heqiu Zhang ◽  
...  
Keyword(s):  
Polyester Fibre ◽  
Zno Nanowires ◽  
Ultraviolet Photodetector ◽  
Uv Photodetector ◽  
Metal Semiconductor Metal ◽  
Schottky Structure

An ultraviolet photodetector based on a ZnO nanowires with metal–semiconductor–metal Schottky structure was fabricated on a flexible polyester fibre substrate.

Medici Simulation of 6H-SiC Oxide Ramp Profile Schottky Structure

1998 ◽  
Vol 264-268 ◽  
pp. 941-944 ◽  
Author(s):  
Gheorghe Brezeanu ◽  
J. Fernandez ◽  
José Millan ◽  
M. Badila ◽  
G. Dilimot
Keyword(s):  
Schottky Structure

Possibility of a Si-Based Infrared Detector Using Microcrystalline B-Si-Ge Alloys

1991 ◽  
Vol 228 ◽  
Author(s):  
Y. Osaka ◽  
K. KOhno ◽  
P. Shresta
Keyword(s):  
Barrier Height ◽  
Infrared Detector ◽  
Avalanche Breakdown ◽  
P Type ◽  
Schottky Structure

ABSTRACTMicrocrystalline films of B-Si-Ge alloy have been deposited by the sputtering of Ge target in atmosphere of SiH4 and B2H6. Microcrystalline B-Si-Ge alloy/Si hetero-junction was fabricated on p-type Si(100) wafers with the resistivity of 1∼10 Ωcm. The barrier height of this Schottky structure was estimated to be in the range of 0.20∼0.30 eV which can be controlled by inclusion amounts of boron. The reverse biased Schottky characteristic using the microcrystalline B-Si-Ge alloy as to the gate shows the avalanche breakdown by illuminating of 6 μm light.

Formation Mechanism and Recombination-Enhanced Dissociation of a Hydrogen-Carbon Complex in Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
Yoichi Kamiura ◽  
Fumio Hashimoto ◽  
Minoru Yoneta
Keyword(s):  
Formation Mechanism ◽  
Chemical Etching ◽  
Surface Region ◽  
Electronic Energy ◽  
Hydrogen Atoms ◽  
Electron Hole ◽  
Near Surface ◽  
Depth Profiles ◽  
Schottky Structure ◽  
Hole Recombination

ABSTRACTWc have found that chemical etching induced an electron trap E3 (0.15) into n-typc Si. We attribute this trap to a hydrogen-carbon complex on the basis of available experimental data. By measuring DLTS depth profiles of the E3 trap, we propose a model of the formation mechanism of the hydrogen-carbon complex as follows. Hydrogen atoms arc adsorbed on the Si surface to terminate Si dangling bonds during chemical etching, and after the etching some unstably adsorbed ones diffuse into the near-surface region of silicon and are trapped by carbon to form the complex. The E3 trap is stable up to 100δC in the dark but is annihilated by the illumination of band gap light around 250K only outside the depletion layer of the Schottky structure. This provides unambiguous experimental evidence for the recombination-enhanced dissociation, in which the electronic energy released by the electron-hole recombination at the E3 level is converted into local kinetic energy of hydrogen to be released from carbon.

Sign in / Sign up

Export Citation Format

Share Document