Role of E×B drift in double-peak density distribution for the new lower tungsten divertor with unfavorable B t on EAST

2021 ◽  
Author(s):  
Guozhang Jia ◽  
H Q Wang ◽  
Guo Sheng Xu ◽  
Liang Wang ◽  
Ang Li ◽  
...  

Abstract Doubly peaked density distribution is expected not only to affect the plasma-wetted area at divertor plates, but also to correlate with the upstream density profile and hence characteristics of MHD activities in tokamak plasmas [H. Q. Wang et al., Phys. Rev. Lett. 124, 195002 (2020)]. Clarifying its origination is important to understand the compatibility between power/particle exhausts in divertor and high-performance core plasmas which is required by present-day and future tokamak devices. In this paper, we analyzed the double-peak density profile appeared in the modeling during the physics design phase of the new lower tungsten divertor for EAST by using comprehensive 2D SOLPS-ITER code package including full drifts and currents, with concentrations on unfavorable magnetic field (ion B×∇B drift is directed away from the primary X-point). The results indicate that E×B drift induced by plasma potential gradient near the target, which is closely related to the divertor state, plays essential roles in the formation of double-peak profile at the target: (1) Large enough radial Ep×B drift produces a broadened high-density region; (2) Strong poloidal Er×B drift drives a significant particle sink and creates a valley on the high-density profile. Thus, the simulation results can explain why this kind of doubly peaked density profile is usually observed at the high-recycling divertor regime. In addition, features of the double-peak ion saturation current distribution measured in preliminary experiments testing the new lower tungsten divertor are qualitatively consistent with the simulations.

2018 ◽  
Author(s):  
Seng Nguon Ting ◽  
Hsien-Ching Lo ◽  
Donald Nedeau ◽  
Aaron Sinnott ◽  
Felix Beaudoin

Abstract With rapid scaling of semiconductor devices, new and more complicated challenges emerge as technology development progresses. In SRAM yield learning vehicles, it is becoming increasingly difficult to differentiate the voltage-sensitive SRAM yield loss from the expected hard bit-cells failures. It can only be accomplished by extensively leveraging yield, layout analysis and fault localization in sub-micron devices. In this paper, we describe the successful debugging of the yield gap observed between the High Density and the High Performance bit-cells. The SRAM yield loss is observed to be strongly modulated by different active sizing between two pull up (PU) bit-cells. Failure analysis focused at the weak point vicinity successfully identified abnormal poly edge profile with systematic High k Dielectric shorts. Tight active space on High Density cells led to limitation of complete trench gap-fill creating void filled with gate material. Thanks to this knowledge, the process was optimized with “Skip Active Atomic Level Oxide Deposition” step improving trench gap-fill margin.


IEEE Access ◽  
2021 ◽  
Vol 9 ◽  
pp. 813-826
Author(s):  
Farid Uddin Ahmed ◽  
Zarin Tasnim Sandhie ◽  
Liaquat Ali ◽  
Masud H. Chowdhury

2016 ◽  
Vol 9 (12) ◽  
pp. 3736-3745 ◽  
Author(s):  
Haihua Wu ◽  
Haobo Li ◽  
Xinfei Zhao ◽  
Qingfei Liu ◽  
Jing Wang ◽  
...  

High-density coordination unsaturated copper(i)–nitrogen embedded in graphene demonstrates a high performance and stability in primary zinc–air batteries with ultralow catalyst loading.


Author(s):  
K. El-Ayat ◽  
S. Kaptanoglu ◽  
R. Chan ◽  
J. Lien ◽  
W. Plants ◽  
...  

2021 ◽  
Author(s):  
Kuo-Shu Kao ◽  
Sheng-Tsai Wu ◽  
Ji-Yuan Syu ◽  
Tao-Chih Chang ◽  
Chang-Chun Lee

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