scholarly journals Transport properties of the electron gas in thin AlAs quantum wells: interface-roughness scattering

2009 ◽  
Vol 150 (4) ◽  
pp. 042041
Author(s):  
A Gold
Keyword(s):  
Quantum Wells ◽  
Transport Properties ◽  
Electron Gas ◽  
Interface Roughness ◽  
Interface Roughness Scattering

MAGNETORESISTANCE OF A SILICON MOSFET ON THE (111) SURFACE IN A PARALLEL MAGNETIC FIELD

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1529-1534 ◽  
Author(s):  
A. GOLD ◽  
O. ANTONIE
Keyword(s):  
Magnetic Field ◽  
Electron Gas ◽  
Impurity Scattering ◽  
Interface Roughness ◽  
Zero Temperature ◽  
Parallel Magnetic Field ◽  
Interface Roughness Scattering ◽  
Dimensional Electron Gas ◽  
Passivated Silicon ◽  
Theoretical Results

In comparison with silicon (100) we argue that the silicon (111) surface is a surface with higher mobility and stronger Coulomb interaction effects. For the resistance of the two-dimensional electron gas we discuss the effects of a magnetic field parallel to the surface: for zero temperature we present theoretical results for the magnetoresistance of an electron gas at the surface of silicon (111) with a six-fold valley degeneracy. Impurity scattering and interface roughness scattering are taken into account. A recent study of a hydrogen-passivated silicon (111) surface showed a mobility proportional to the electron density. We present, using a model for neutral impurities, predictions for the magnetoresistance of this sample in a parallel magnetic field.

scholarly journals Temperature and electric field dependences of the mobility of electrons in vertical transport in GaAs/Ga1−y AlyAs barrier structures containing quantum wells

Open Physics ◽  
2008 ◽  
Vol 6 (3) ◽  
Author(s):  
Safi Altunöz ◽  
Hüseyin Çelik ◽  
Mehmet Cankurtaran
Keyword(s):  
Quantum Wells ◽  
Applied Voltage ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Vertical Transport ◽  
Interface Roughness ◽  
Polar Optical Phonon ◽  
Optical Phonon Scattering ◽  
Interface Roughness Scattering ◽  
The Difference

AbstractThe mobility of electrons in vertical transport in GaAs/Ga1−y AlyAs barrier structures was investigated using geometric magnetoresistance measurements in the dark. The samples studied had Ga1−y AlyAs (0 ≤ y ≤ 0:26) linearly graded barriers between the n+-GaAs contacts and the Ga0:74Al0:26As central barrier, which contain N w (=0, 2, 4, 7 and 10) n-doped GaAs quantum wells. The mobility was determined as functions of (i) temperature (80–290 K) at low applied voltage (0.01–0.1 V) and (ii) applied voltage (0.005–1.6 V) at selected temperatures in the range 3.5–290 K. The experimental results for the temperature dependence of low-field mobility suggest that space-charge scattering is dominant in the samples with N w=0 and 2, whereas ionized impurity scattering is dominant in the samples with N w=4, 7 and 10. The effect of polar optical phonon scattering on the mobility becomes significant in all barrier structures at temperatures above about 200 K. The difference between the measured mobility and the calculated total mobility in the samples with N w=4, 7 and 10, observed above 200 K, is attributed to the reflection of electrons from well-barrier interfaces in the quantum wells and interface roughness scattering. The rapid decrease of mobility with applied voltage at high voltages is explained by intervalley scattering of hot electrons.

scholarly journals Effect from Doping of Quantum Wells on Enhancement of The Mobility Limited by One-Interface Roughness Scattering

2011 ◽  
Vol 21 (3) ◽  
pp. 211
Author(s):  
Tran Thi Hai ◽  
Nguyen Huyen Tung ◽  
Nguyen Trung Hong
Keyword(s):  
Quantum Wells ◽  
Correlation Length ◽  
Variational Approach ◽  
Carrier Density ◽  
Enhancement Factor ◽  
Theoretical Study ◽  
Interface Roughness ◽  
Interface Roughness Scattering

We present a theoretical study of the effect from doping of quantum wells (QWs) on enhancement of the mobility limited by one-interface roughness scattering. Within the variational approach, we introduce the enhancement factor defined by the ratio of the overall mobility in symmetric two-side doped square QWs to that in the asymmetric one-side counterpart under the same doping and interface profiles. The enhancement is fixed by the sample parameters such as well width, sheet carrier density, and correlation length. So, we propose two-side doping as an efficient way to upgrade the quality of QWs. The two-interface roughness scattering is also incorporated to make comparison.

Interface roughness scattering in InAs/AlSb quantum wells

1992 ◽  
Vol 61 (2) ◽  
pp. 213-215 ◽  
Author(s):  
C. R. Bolognesi ◽  
H. Kroemer ◽  
J. H. English
Keyword(s):  
Quantum Wells ◽  
Interface Roughness ◽  
Interface Roughness Scattering

Interface roughness scattering in GaAs/AlAs quantum wells

1987 ◽  
Vol 51 (23) ◽  
pp. 1934-1936 ◽  
Author(s):  
H. Sakaki ◽  
T. Noda ◽  
K. Hirakawa ◽  
M. Tanaka ◽  
T. Matsusue
Keyword(s):  
Quantum Wells ◽  
Interface Roughness ◽  
Interface Roughness Scattering
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