scholarly journals Variation of etching time on formation of porous silicon on p-type Si (111) using electrochemical anodization method

2021 ◽  
Vol 1825 (1) ◽  
pp. 012067
Author(s):  
Sehati ◽  
S Wijayanti ◽  
R Suryana
Keyword(s):  
Porous Silicon ◽  
Electrochemical Anodization ◽  
Etching Time ◽  
P Type ◽  
Anodization Method

Influence of Etching Time on Surface Structural Properties of p- and n- Type Porous Silicon Nanostructures by Photo-Electrochemical Anodic Etching

2012 ◽  
Vol 576 ◽  
pp. 511-515
Author(s):  
N.A. Asli ◽  
Maslihan Ain Zubaidah ◽  
S.F.M. Yusop ◽  
Khairunnadim Ahmad Sekak ◽  
Mohammad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Crystalline Silicon ◽  
Surface Characteristic ◽  
Electrochemical Anodization ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Force Microscopy ◽  
Etching Parameters ◽  
P Type ◽  
Substrate Doping

Porous silicon nanostructures (PSiN) are nanoporous materials which consist of uniform network of interconnected pore. The structure of PSiN is depending on etching parameters, including current density, HF electrolyte concentration, substrate doping type and level. In this work, the results of a structural p-type and n-type of porous silicon nanostructures were investigated by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM) is reported. Samples were prepared by photo-electrochemical anodization of p- and n-type crystalline silicon in HF electrolyte at different etching time. The surface morphology of PSiN was studied by FESEM with same magnification shown n-type surface form crack faster than p-type of PSiN. While the topography and roughness of PSiN was characterize by AFM. From topography shown the different etching time for both type PSiN produce different porosity and roughness respectively. There is good agreement between p- and n-type have different in terms of surface characteristic.

Photoluminescence Properties of Porous Silicon Nanostructures (PSiNs) with Optimum Electrolyte Volume Ratio of Photo-Electrochemical Anodization

2012 ◽  
Vol 620 ◽  
pp. 40-44 ◽  
Author(s):  
Maslihan Ain Zubaidah ◽  
N.A. Asli ◽  
S.F.M. Yusop ◽  
Mohamad Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Porous Silicon ◽  
Light Emitting Diode ◽  
Volume Ratio ◽  
Electrochemical Anodization ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Photoluminescence Properties ◽  
Light Emitting ◽  
Flat Screen ◽  
P Type

Porous silicon nanostructures light-emitting diode (PSiNs-LED) will be a device for future flat screen display and can be high in demand. Main purpose of this experiment is to determine the photoluminescence properties of porous silicon nanostructures (PSiNs). PSiNs samples were prepared using photo-electrochemical anodization. P-type silicon substrate was used for this experiment. For the formation of PSiNs, a fixed current density (J=20 mA/cm2) and 30 minutes etching time was applied for the variety of electrolyte volume ratio. Volume ratio of hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), HF48%:C2H5OH, were used for samples 3:1, 2:1, 1:1, 1:2 and 3:1. The effective photoluminescence properties was observed for sample C.

EFFECT OF ETCHING TIME ON THE CHARACTERISTICS OF LOW RESISTIVITY POROUS Si DEVICES

2013 ◽  
Vol 27 (30) ◽  
pp. 1350217 ◽  
Author(s):  
RAID A. ISMAIL
Keyword(s):  
Porous Silicon ◽  
Photoelectron Spectroscopy ◽  
Crystalline Silicon ◽  
Electrochemical Anodization ◽  
Etching Time ◽  
X Ray ◽  
Force Microscopy ◽  
Low Resistivity ◽  
Time Scanning ◽  
P Type

In this paper, we report the effect of etching time on the morphological, structural and electrical properties of porous silicon ( PSi ) synthesized by electrochemical anodization of low resistivity p-type crystalline silicon at current density of 15 mA/cm2. Atomic force microscopy (AFM) measurements showed that the square root of roughness is increased with etching time. Scanning electron microscopy (SEM) investigations revealed that the microstructure of porous silicon is varying with etching time and pores from nano-size to micro-size were formed. Energy dispersive X-ray (EDX) analysis confirmed that the amount of oxygen increases with etching time. Porosity and thickness estimated gravimetrically showed a dependence on the anodization time. The room temperature dark electrical resistivity of porous silicon has observed to be increased with etching time. X-ray photoelectron spectroscopy (XPS) analysis of synthesized porous silicon has shown peaks of C 1s, Si 2p, O 1s, F 1s and N 1s. Current–voltage (I–V) characteristics of synthesized Al / PSi /c -Si junctions prepared at different etching times are investigated and analyzed. The ideality factor, barrier height and built-in potential of porous silicon junctions were strongly found to be dependent on the etching time.

Relation of Anodisation Parameter for Nanocrystallite Size of Porous Silicon Template Studied by Micro-Raman Spectroscopy

2013 ◽  
Vol 667 ◽  
pp. 324-328 ◽  
Author(s):  
N.A. Asli ◽  
Mohamad Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Raman Spectroscopy ◽  
Porous Silicon ◽  
Current Density ◽  
Pore Diameter ◽  
Crystalline Silicon ◽  
Electrochemical Anodization ◽  
Etching Time ◽  
Micro Raman Spectroscopy ◽  
Nanocrystallite Size ◽  
P Type

Nanostructured porous silicon templates (NPSiT) were prepared by photo-electrochemical anodization of p-type crystalline silicon in HF electrolyte at different etching time. Two set anodisation parameter were observed, anodisation time nd current density applied. For set one, five samples were prepared with etching time varied from 10 to 50 minutes at 20 mA/cm2 of current density. For set two, five samples were prepared with current density varied from 5 to 40 mA/cm2 for 30 minutes. The effects of these anodisation parameter on NPSiT were observed based on nanocrystallite size. These studied was demonstrated by Raman spectroscopy. It was found that NPSiT sample with large pore diameter, which is smaller nanocrystallites size of Si between pore.

Electroluminescence and Photoluminescence Properties of Porous Silicon Nanostructures with Optimum Current Density of Photo-Electrochemical Anodisation

2013 ◽  
Vol 667 ◽  
pp. 180-185
Author(s):  
M. Ain Zubaidah ◽  
F.S. Husairi ◽  
S.F.M. Yusop ◽  
Noor Asli Asnida ◽  
Mohamad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Volume Ratio ◽  
Boron Doping ◽  
Peak Position ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Photoluminescence Properties ◽  
Current Densities ◽  
Pl Spectrum ◽  
P Type

P-type silicon wafer ( orientation; boron doping; 0.75 ~ 10 Ω cm-1) was used to prepare samples of porous silicon nanostructures (PSiNs). All samples have been prepared by using photo-electrochemical anodisation. A fixed etching time of 30 minutes and volume ratio of electrolyte, hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), 1:1 were used for various current densities, J. There were sample A (J=10 mA/cm2), sample B (J=20 mA/cm2), sample C (J=30 mA/cm2), sample D (J=40 mA/cm2) and sample E (J=50 mA/cm2). Photoluminescence (PL) and electroluminescence (EL) spectra were investigated. Maximum peak position of PL spectrum at about ~675 nm, while the maximum EL spectrum at about ~650 nm (which is similar to the PL spectrum).

Effect of etching time on structure of p-type porous silicon

2018 ◽  
Vol 461 ◽  
pp. 44-47 ◽  
Author(s):  
Martin Kopani ◽  
Milan Mikula ◽  
Daniel Kosnac ◽  
Pavol Vojtek ◽  
Jan Gregus ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Etching Time ◽  
P Type

scholarly journals Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching

ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Igor Iatsunskyi ◽  
Valentin Smyntyna ◽  
Nykolai Pavlenko ◽  
Olga Sviridova
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Etching Time ◽  
Force Microscopy ◽  
Porous Layers ◽  
Atomic Force ◽  
Silicon Nanostructure ◽  
Metal Assisted Chemical Etching ◽  
Concentrated Solution ◽  
P Type

Photoluminescent (PL) porous layers were formed on p-type silicon by a metal-assisted chemical etching method using H2O2 as an oxidizing agent. Silver particles were deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2. The morphology of the porous silicon (PS) layer formed by this method was investigated by atomic force microscopy (AFM). Depending on the metal-assisted chemical etching conditions, the macro- or microporous structures could be formed. Luminescence from metal-assisted chemically etched layers was measured. It was found that the PL intensity increases with increasing etching time. This behaviour is attributed to increase of the density of the silicon nanostructure. It was found the shift of PL peak to a green region with increasing of deposition time can be attributed to the change in porous morphology. Finally, the PL spectra of samples formed by high concentrated solution of AgNO3 showed two narrow peaks of emission at 520 and 550 nm. These peaks can be attributed to formation of AgF and AgF2 on a silicon surface.

Sign in / Sign up

Export Citation Format

Share Document